Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Osram Opto Semiconductor Gmbh

Osram Gmbh

Other

Heraeus Deutschland Gmbh & Co Kg

Osram Oledgmbh

Heraeus Materials Technology Gmbh & Co. Kg

Alanod Gmbh & Co. Kg

Shin-etsu Chemical Co., Ltd.

Jörg Erich Sorg

Toshio Shiobara

Frank Singer

Herbert Brunner

Moritz Engl

Stefan Gruber

Roland Schulz

Alfred Lell

Georg Bogner

Stefan Grötsch

Alan Lenef

Joachim Reill

Thomas Schwarz

Berthold Hahn

Siegfried Herrmann

Günter Waitl

Johannes Baur

Andreas Dobner

Hubert Halbritter

Tsutomu Kashiwagi

Bert Braune

Jan Marfeld

Ewald Karl Michael Guenther

Norbert Stath

Karl Weidner

Michael Zitzlsperger

Simon Jerebic

Walter Wegleiter

Krister Bergenek

Andreas Biebersdorf

Jörg Zapf

Heinrich Noll

Florian Peskoller

Harald König

Karsten Auen

Harald Jäger

Thomas Zeiler

Johann Ramchen

Eckhard Ditzel

Steffen Köhler

Klaus Höhn

David Racz

Andreas Plössl

Yi Zheng

Patrick Kromotis

Andreas Plößl

Oliver Wutz

Bernd Ludewig

Ralf Mayer

Roland Hüttinger

Christoph Koller

Nicole Berner

Farhang Ghasemi Afshar

Konrad Wagner

Ann Russell

Torsten Baade

Stefan Ziegler

Sergey Kudaev

Herbert Breinich

Christopher A Tarry

Ewald Karl Michael Günther

Michael Förster

Michael Benedikt

Alexander Peetsch

Josef Hirn

Abdullah Gok

Michael Austgen

Stefan GRÖTSCH

Ewald Karl Michael GÜNTHER

Steffen KÖHLER

In at least one embodiment, the optoelectronic semiconductor device comprises a carrier, a first semiconductor laser configured to emit a first laser radiation and applied on the carrier, and a multi-mode waveguide configured to guide the first laser radiation and also applied on the carrier, wherein the multi-mode waveguide comprises at least one furcation and a plurality of branches connected by the at least one furcation.

Optoelectronic semiconductor device and glasses

In one embodiment the semiconductor laser comprises a carrier and an edge-emitting laser diode which is mounted on the carrier and which comprises an active zone for generating a laser radiation and a facet with a radiation exit region. The semiconductor laser further comprises a protective cover, preferably a lens for collimation of the laser radiation. The protective cover is fastened to the facet and to a side surface of the carrier by means of an adhesive. A mean distance between a light entrance side of the protective cover and the facet is at most 60 μm. The semiconductor laser is configured to be operated in a normal atmosphere without additional gas-tight encapsulation.

Semiconductor laser and method of production for optoelectronic semiconductor parts

The invention relates to a laser projection arrangement. The arrangement includes a sub-mount carrier with a main surface and at least one edge-emitting laser arranged on the sub-mount. The at least one edge-emitting laser is facing the sub-mount and includes at least one laser facet that is located at a predefined distance from the main surface of the sub-mount. A planar light circuit with at least one light guide has an inlet and is arranged on the sub-mount such that the at least one light guide and the inlet is located at the predefined distance from the main surface of the sub-mount facing the at least one laser facet.

Laser projection arrangement and method for arranging thereof

In one embodiment, the method serves for producing semiconductor lasers and includes the following steps in the order indicated: A) applying a multiplicity of edge emitting laser diodes on a mounting substrate, B) applying an encapsulation element, such that the laser diodes are applied in each case in a cavity between the mounting substrate and the associated encapsulation element, C) operating the laser diodes and determining emission directions of the laser diodes, D) producing material damage in partial regions of the encapsulation element, wherein the partial regions are uniquely assigned to the laser diodes, E) collectively removing material of the encapsulation element, said material being affected by the material damage, with the result that individual optical surfaces for beam shaping arise for the laser diodes in the partial regions, and F) singulating to form the semiconductor lasers.

Method for producing semiconductor lasers and semiconductor lasers

In an embodiment a radiation-emitting component includes a first semiconductor chip configured to generate first primary electromagnetic radiation, a second semiconductor chip configured to generate second primary electromagnetic radiation, a first conversion element configured to partially convert the first and/or the second primary electromagnetic radiation into a first secondary radiation, wherein the first semiconductor chip is a first semiconductor laser diode, wherein the first primary electromagnetic radiation is blue primary radiation and wherein the first secondary radiation is green secondary radiation and a first optical element arranged between radiation emitting surfaces of the first semiconductor chip and the second semiconductor chip, wherein the first optical element is reflective for the first primary radiation and the second primary radiation.

Radiation-emitting component

A planar light circuit comprises a substrate and a first pixel. The first pixel comprises a first number N of laser diodes, a first waveguide located on the substrate, a first number N of inlets which couple the first number N of laser diodes to the first waveguide and a first outlet. The first waveguide couples the first number N of inlets to the first outlet. An arrangement comprises the planar light circuit. The arrangement is realized as data glasses.

Planar light circuit and arrangement with planar light circuit

Carrier with an electrically insulating base material, electrically conductive through-connections and a thermal connection element. The through-connections and the thermal connection element are each completely surrounded by the base material in the lateral direction, the thermal connection element and the through-connections completely penetrating the base material perpendicularly to the main extension plane of the carrier, and the thermal connection element being formed with a material which has a thermal conductivity of at least 200 W/(m K).

Carrier, assembly comprising a substrate and a carrier, and method for producing a carrier

The invention relates to a method for producing optoelectronic components. The invention comprises: provision of a metal substrate, the substrate having a front side and a rear side opposite the front side; front-side removal of substrate material such that the substrate comprises substrate sections protruding in the region of the front side and recesses arranged there between; formation of a plastic body adjacent to substrate sections; arrangement of optoelectronic semiconductor chips on substrate sections; rear-side removal of substrate material in the region of the recesses, such that the substrate is structured into separate substrate sections; and performance of a separation process. The plastic body is divided into separate substrate sections and individual optoelectronic components with at least one optoelectronic semiconductor chip are formed. The invention also relates to an optoelectronic component.

Production of optoelectronic components

The invention relates to a semiconductor laser including a carrier, an edge-emitting laser diode which is arranged on the carrier and which has an active zone for generating laser radiation and a facet with a radiation exit area, an optical element which covers the facet, a connecting material which is arranged between the optical element and the facet, a molded body which covers the laser diode and the optical element at least in places, wherein the optical element is at least partially transparent to the laser radiation emitted by the laser diode during operation, and the optical element is designed to change the main propagation direction of the laser radiation entering the optical element during operation.

Semiconductor laser

In one embodiment the semiconductor laser () comprises a carrier () and an edge-emitting laser diode () which is mounted on the carrier () and which comprises an active zone () for generating a laser radiation (L) and a facet () with a radiation exit region (). The semiconductor laser () further comprises a protective cover (), preferably a lens for collimation of the laser radiation (L). The protective cover () is fastened to the facet () and to a side surface () of the carrier () by means of an adhesive (). A mean distance between a light entrance side () of the protective cover () and the facet () is at most 60 &#x3bc;m. The semiconductor laser () is configured to be operated in a normal atmosphere without additional gas-tight encapsulation.

An optoelectronic component is provided that includes a radiation-emitting semiconductor chip, which emits electromagnetic radiation from a radiation exit surface during operation, a carrier comprising at least two first contact points, and a cover including at least two second contact points, wherein the at least two first contact points and the at least two second contact points are electrically conductively and/or thermally conductively connected to one another by a first plurality of nanowires and a second plurality of nanowires, and the nanowires provide a mechanically stable connection between the carrier and the cover. In addition, a method for producing an optoelectronic component is provided.

Optoelectronic component and method for producing an optoelectronic component

Provided is an optoelectronic light source that includes a plurality of semiconductor lasers each configured to emit a laser beam and arranged on a mounting platform, and a redirecting optical element configured to redirect the laser beams. The redirecting optical element includes for each one of the plurality of semiconductor lasers a separate reflection zone, the reflection zones are shaped differently from one another, and after passing the redirecting optical element, the laser beams run in a common plane.

Optoelectronic light source and data glasses

In one embodiment, the optoelectronic semiconductor component () comprises a semiconductor chip () for generating radiation and an inorganic housing (). The semiconductor chip () is accommodated in a hermetically sealed manner in the housing (). The housing () has a preferably ceramic base plate (), a cover plate () and at least one preferably ceramic housing ring () and a plurality of electrical through-connections (). A recess (), in which the semiconductor chip () is located, is formed by the housing ring (). The base plate () has a plurality of electrical connection surfaces () on a component underside (). A plurality of through-connections () each extend through the base plate (), through the cover plate () and through the housing ring (). The base plate (), the at least one housing ring () and the cover plate () are firmly connected to one another via continuous, peripheral inorganic sealing frames (). Finally, the housing () comprises a radiation exit region () for emitting radiation.

Optoelectronic semiconductor component, and method for producing an optoelectronic semiconductor component

Growing community of inventors

Wuppertal, Germany

Jörg Erich Sorg