Hgst Netherlands, B.v.

Western Digital Technologies, Inc.

Hitachi Global Storage Technologies Netherlands B.v.

Sandisk Technologies Inc.

International Business Machines Corporation

Jordan Asher Katine

Neil Leslie Robertson

Patrick Braganca

Lei Wan

Neil Smith

Yang Li

Zvonimir Z Bandic

Barry C Stipe

Jeffrey Childress

Hamid Balamane

Robert Fontana

Luiz M Franca-Neto

Tsai-Wei Wu

Thomas Dudley Boone, Jr

Jeffery Robinson Childress

Bruce Alvin Gurney

Michael Joseph Rooks

Quang Le

Haiwen Xi

Ching Hwa Tsang

Howard Gordon Zolla

Jui-lung Li

Bernd Lamberts

Qingbo Wang

Pankaj Mehra

Goran Mihajlovic

Liesl Folks

Sridhar Chatradhi

Kuok San Ho

Kim Yang Lee

Stefan Maat

Matthew Joseph Carey

Ernesto Esteban Marinero

A David Erpelding

Alexander Michael Zeltser

Douglas Johnson Werner

Scott Arthur MacDonald

Matteo Staffaroni

Vijay P S Rawat

Petrus Antonius Vanderheijden

Hsin-Wei Tseng

Hardayal Singh Gill

Christopher John Petti

Erhard Theodor Schreck

Jeffrey Scott Lille

Ming Jiang

Yi Zheng

Bruce David Terris

Hugo Alberto Emilio Santini

Sue Siyang Zhang

Manfred Ernst Schabes

Meng Ding

Mac D Apodaca

Huey-Ming Tzeng

Frederick Hayes Dill

Yangyin Chen

Sergio Nicoletti

Yinshi Liu

John C Read

Young-Suk Choi

Christian Rene Bonhote

Samuel Weisan Yuan

Raman Gobichettipalayam Viswanathan

Chu-Chen Fu

Kanaiyalal Patel

Thomas Robert Berthold

Xhavin Sinha

Ernst Kratschmer

Joseph A Bonetti

Thomas Dudley Boon, Jr

Jennifer Liu

Selector material layers are formed over the first electrically conductive lines, and magnetic tunnel junction material layers are formed over the selector material layers. The magnetic tunnel junction material layers are patterned into a two-dimensional array of magnetic tunnel junction (MTJ) pillar structures. A dielectric spacer material layer is deposited over the two-dimensional array of MTJ pillar structures. The dielectric spacer material layer and the selector material layers are anisotropically etched. Patterned portions of the selector material layers include a two-dimensional array of selector-containing pillar structures. Second electrically conductive lines are formed over the two-dimensional array of MTJ pillar structures.

Cross-point magnetoresistive memory array including self-aligned dielectric spacers and method of making thereof

A memory device includes a cross-point array of magnetoresistive memory cells. Each magnetoresistive memory cell includes a vertical stack of a selector-containing pillar structure and a magnetic tunnel junction pillar structure. The lateral spacing between neighboring pairs of magnetoresistive memory cells may be smaller along a first horizontal direction than along a second horizontal direction, and a dielectric spacer or a tapered etch process may be used to provide a pattern of an etch mask for patterning first electrically conductive lines underneath the magnetoresistive memory cells. Alternatively, a resist layer may be employed to pattern first electrically conductive lines underneath the cross-point array. Alternatively, a protective dielectric liner may be provided to protect selector-containing pillar structures during formation of the magnetic tunnel junction pillar structures.

Cross-point magnetoresistive random memory array and method of making thereof using self-aligned patterning

A memory array is provided that includes a plurality of word lines and a plurality of bit lines, and a plurality of memory cells each including a corresponding magnetic memory element coupled in series with a corresponding selector element. Each memory cell is coupled between one of the word lines and one of the bit lines. Each memory cell has a half-pitch F, and comprises an area between 2Fand 4F.

One selector one resistor MRAM crosspoint memory array fabrication methods

A spin-orbit-torque (SOT) magnetoresistive random access memory (MRAM) device includes a SOT MRAM cell containing a first two terminal selector element, a nonmagnetic metallic assist plate, and a magnetic tunnel junction located between the first two terminal selector element and the nonmagnetic metallic assist plate, and a circuit selection element selected from a transistor or a second two terminal selector element electrically connected to the nonmagnetic metallic assist plate of the SOT MRAM cell.

Method of making magnetoresistive memory cell over a selector pillar

A memory device includes a cross-point array of spin-torque transfer MRAM cells. First rail structures laterally extend along a first horizontal direction. Each of the first rail structures includes a vertical stack including, from bottom to top, a first electrically conductive line, a reference layer having a fixed magnetization direction, and a tunnel barrier layer. Second rail structures laterally extend along a second horizontal direction. Each of the second rail structures includes a second electrically conductive line that overlies the first rail structures. A two-dimensional array of pillar structures is located between a respective one of the first rail structures and a respective one of the second rail structures. Each of the pillar structures includes a free layer having energetically stable magnetization orientations that are parallel or antiparallel to the fixed magnetization direction.

Cross-point spin-transfer torque magnetoresistive memory array and method of making the same

Spin-orbit-torque magnetoresistive memory cell with integrated selector elements and method of making the same

A memory array is provided that includes a first memory level having a plurality of memory cells each including a corresponding magnetic memory element coupled in series with a corresponding selector element, and a plurality of vias, each of the vias coupled in series with a corresponding one of the memory cells.

Disclosed herein are magnetic storage media with embedded disconnected circuits, and magnetic storage systems comprising such media. A magnetic storage media comprises a recording layer comprising a storage location, and an embedded disconnected circuit (EDC) configured to assist in at least one of writing to or reading from the storage location in response to a wireless activation signal. A magnetic storage system comprises a signal generator configured to generate a wireless activation signal, a magnetic storage media with a plurality of storage locations, and a write transducer and/or a read receiver. The magnetic storage media has at least one EDC configured to assist in writing to and/or reading from at least one of the plurality of storage locations in response to the wireless activation signal.

Embedded disconnected circuits in magnetic storage media of data storage devices

Disclosed herein are methods of using embedded disconnected circuits (EDC) in magnetic storage media to assist in reading data from and writing data to the magnetic storage media. A wireless activation signal is used to activate an EDC in a magnetic storage media. Once activated, the EDC may assist to record data in and/or read data from one or more memory locations of the magnetic storage media.

Methods of using embedded disconnected circuits in magnetic storage media of data storage devices

A system according to one embodiment includes a pinned layer; a spacer layer above the pinned layer; a free layer above the spacer layer; a heating device, for heating the free layer to induce a paramagnetic thermal instability in the free layer whereby a magnetization of the free layer randomly switches between different detectable magnetic states upon heating thereof; and a magnetoresistance detection circuit for detecting an instantaneous magnetic state of the free layer.

Random number generator by superparamagnetism

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Mountain View, CA, United States of America

Jordan Asher Katine