Samsung Electronics Co., Ltd.

Sungkyunkwan University

Joosung Kim

Donggun Lee

Jonguk Seo

Junhee Choi

Youngjo Tak

Hyoseok Na

Joohun Han

Nakhyun Kim

Sanguk Kim

Sungjin Ahn

Jeongwook Lee

Gibum Kim

Doil Ku

Youngjin Choi

Yongseok Choi

Jonghoon Ha

Juhyun Kim

Younghwan Park

Kiho Kong

Tan Sakong

Junghun Park

Hanyeop Lee

Yongjun An

Eunsung Lee

Dongsu Kim

Dongchul Shin

Suhyun Jo

Yuseon Lee

Juho Van

Jongin Yang

Hyungkoun Cho

Chulseung Pyo

Hyunsang Kang

Younggil Gi

Younghak Park

Yonghee Yang

Youngsub Lee

Yoonkook Son

Youngdae Yun

Provided are nanorod light emitting diodes (LEDs), display apparatuses, and manufacturing methods thereof. The nanorod LED includes a first-type semiconductor layer including a body and a pyramidal structure continuously provided from the body, a nitride light emitting layer provided on the pyramidal structure, and a second-type semiconductor layer provided in the nitride light emitting layer.

Nanorod LED, display apparatus including the same, and method of manufacturing the nanorod LED

A nanorod light emitting device includes a semiconductor light emitting nanorod, and a passivation film surrounding a sidewall of the semiconductor light emitting nanorod and having insulating properties, wherein the passivation film includes an insulating crystalline material having a same crystal structure as a crystal structure of the semiconductor light emitting nanorod.

Nanorod light emitting device, method of manufacturing the same, and display apparatus including the same

An electronic device includes a display; a conductive plate supporting the display; a bracket including a surface and a structure at least partially removed from the surface, wherein the surface faces toward the conductive plate and is spaced apart from the conductive plate; a connecting member crossing the structure along the surface and connecting the conductive plate and the bracket, the connecting member including a first conductive portion and a second conductive portion; and a conductive tape between the connecting member and the bracket, wherein the first conductive portion overlaps with the structure when viewed from a first direction toward the display and is at least partially inserted into the structure, at least part of the first conductive portion contacts the conductive plate, and the second conductive portion extends from the first conductive portion along a surface of the bracket and has an end attached to the bracket through the conductive tape.

Electronic device including connecting member of internal structure

Provided is a substrate structure including a substrate, a buffer layer disposed on the substrate, a porous semiconductor layer disposed on the buffer layer, the porous semiconductor layer having a plurality of voids, a plurality of semiconductor light emitting structures disposed on the porous semiconductor layer, the plurality of semiconductor light emitting structures having a nanorod shape extending vertically, and a passivation film disposed on a side wall of each of the plurality of semiconductor light emitting structures, the passivation film having an insulation property.

Nanorod light emitting device, substrate structure including a plurality of nanorod light emitting devices, and method of manufacturing the substrate structure

A semiconductor light emitting device includes a light emitting structure in the form of a rod, including a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer, and having a first surface, a second surface opposing the first surface, and a side surface connecting the first and second surfaces; a regrowth semiconductor layer surrounding an entire side surface of the light emitting structure and having a first thickness in a first position along a perimeter of the side surface and a second thickness, different from the first thickness, in a second position along a perimeter of the side surface; a first electrode on the first surface of the light emitting structure and connected to the first conductivity-type semiconductor layer; and a second electrode on the second surface of the light emitting structure and connected to the second conductivity-type semiconductor layer.

Semiconductor light emitting device and display apparatus

A semiconductor light emitting device is provided. The device includes a light emitting structure stack including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer arranged between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode electrically connected to the first conductive semiconductor layer; a second electrode electrically connected to the second conductive semiconductor layer; and a field control structure on a sidewall of the light emitting structure stack, the field control structure including a field control electrode on a sidewall of the active layer; and a dielectric layer between the field control electrode and the active layer.

Semiconductor light emitting devices

Provided is a semiconductor light-emitting device including a substrate, a first insulating layer disposed on an upper surface of the substrate, a plurality of light-emitting structures disposed on the first insulating layer and spaced apart from each other, each of the plurality of light-emitting structures including a first semiconductor layer, an active layer, and a second semiconductor layer, a plurality of optical layers each filling a groove that is formed at a certain depth in the second semiconductor layer, a plurality of first electrodes penetrating the substrate and electrically connected to the first semiconductor layer, a plurality of second insulating layers disposed on side surfaces of each of the plurality of light-emitting structures, respectively, and a second electrode connected to the plurality of light-emitting structures, the second electrode being disposed on an uppermost surface of the second semiconductor layer and each of the plurality of second insulating layers.

Semiconductor light-emitting device with groove and method of manufacturing the same

A three-dimensionally structured semiconductor light emitting diode includes a first conductivity-type semiconductor rod having integral first and second portions, the first portion defining a first surface, the second portion defining a second surface opposite the first surface, and a side surface between the first and second surfaces, an active layer and a second conductivity-type semiconductor layer on the side surface of the first conductivity-type semiconductor rod, the active layer and the second conductivity-type semiconductor layer being on the second portion of the first conductivity-type semiconductor rod, an insulating cap layer on the second surface of the first conductivity-type semiconductor rod, a transparent electrode layer on the second conductivity-type semiconductor layer, and a passivation layer on the transparent electrode layer and exposing a portion of the transparent electrode layer, the passivation layer extending to cover ends of the active layer and the second conductivity-type semiconductor layer adjacent to the first surface.

Three dimensionally structured semiconductor light emitting diode and display apparatus

A semiconductor light-emitting device includes a plurality of light-emitting device structures separated from each other, each of the plurality of light-emitting device structures including a first conductivity type semiconductor layer, an active layer on the first conductivity type semiconductor layer, a second conductivity type semiconductor layer on the active layer, a first electrode connected to the first conductivity type semiconductor layer, and a second electrode connected to the second conductivity type semiconductor layer, and a partition wall structure between two adjacent light-emitting device structures of the plurality of light-emitting device structures, the partition wall structure defining a pixel space.

Semiconductor light-emitting device and method of fabricating the same

According to various embodiments of the disclosure, an electronic device may comprise: a housing including: a first surface, a second surface facing in a direction opposite to the first surface, and a side surface at least partially surrounding a space between the first surface and the second surface; a printed circuit board disposed between the first surface and the second surface; a first sensing element including a plurality of conductive vias arranged in parallel to the side surface in at least a portion of an edge of the printed circuit board; and a grip sensor electrically connected with the first sensing element. The grip sensor may be configured to detect a change in capacitance due to an approach or contact state of an external object to the housing, in at least a portion of the side surface of the housing using the first sensing element.

Electronic device including grip sensor

A method of manufacturing an oxide semiconductor, includes impregnating a substrate in a solution containing a metal precursor and hydroxyl ions, and forming a metal oxide on the substrate by applying a voltage to the solution. The solution includes a surfactant, and the direction of crystal growth of the metal oxide is controllable based on the surfactant.

Method of manufacturing oxide semiconductor

Provided are an electronic device for determining failure of a signal path and a component, and a method for operating the electronic device according to various embodiments. The electronic device comprises: at least one connection part for connection to an external device; a first signal path including an amplifier for amplifying a signal transmitted to the outside of the electronic device; a second signal path for obtaining another signal from the outside of the electronic device; an antenna port electrically connected to the first signal path and the second signal path through a filter circuit; and a communication module, wherein the communication module may be configured to transmit a transmission signal through the first signal path to the antenna port, obtain at least a part of the transmission signal through the second signal path, and determine whether the electronic device is defective on the basis of the transmission signal and information associated with at least a part of the transmission signal. Various other embodiments are possible.

Electronic device for determining failure of signal path and component, and method for operating same

Growing community of inventors

Seongnam-si, South Korea

Joosung Kim