Nxp B.v.

Interuniversitair Micro-elektronica Centrum Vzw

Joost Melai

Erwin Hijzen

Philippe Meunier-Beillard

Johannes Donkers

Johannes Josephus Theodorus Marinus Donkers

Tony Vanhoucke

Petrus Hubertus Cornelis Magnee

Wibo Daniel Van Noort

Viet Thanh Dinh

Johannes J T M Donkers

Stefaan Van Huylenbroeck

Ihor Brunets

Petrus Magnee

Li Jen Choi

Andreas M Piontek

Mahmoud Al-sa'di

A method of making a semiconductor switch device and a semiconductor switch device made according to the method. The method includes depositing a gate dielectric on a major surface of a substrate. The method also includes depositing and patterning a gate electrode on the gate dielectric. The method further includes depositing an oxide to cover the top surface and sidewall(s) of the gate electrode. The method also includes, after depositing the oxide, performing a first ion implantation process at a first implantation dosage for forming a lightly doped drain region of the switch device. The method further includes forming sidewall spacers on the sidewall(s) of the gate electrode. The method also includes performing a second ion implantation process at a second implantation dosage for forming a source region and a drain region of the semiconductor switch device. The second implantation dosage is greater than the first implantation dosage.

Semiconductor switch device

A semiconductor device comprising a bipolar transistor and a method of making the same. The bipolar transistor includes a collector having a laterally extending drift region. The bipolar transistor also includes a base located above the collector. The bipolar transistor further includes an emitter located above the base. The bipolar transistor also includes a reduced surface field (RESURF) gate located above an upper surface of the laterally extending drift region for shaping an electric field within the collector. The bipolar transistor further includes a gap located between the reduced surface field gate and an extrinsic region of the base of the device, for electrically isolating the reduced surface field gate from the base. A lateral dimension Lof the gap is in the range 0.1 &#x3bc;m&#x2266;L&#x2266;1.0 &#x3bc;m.

Semiconductor device comprising a bipolar transistor

The invention relates to a semiconductor device () with a substrate () and a semiconductor body () comprising a bipolar transistor with in that order a collector region (), a base region (), and an emitter region (), wherein the semiconductor body comprises a projecting mesa () comprising at least a portion of the collector region () and the base region (), which mesa is surrounded by an isolation region (). According to the invention, the semiconductor device () also comprises a field effect transistor with a source region, a drain region, an interposed channel region, a superimposed gate dielectric (), and a gate region (), which gate region () forms a highest part of the field effect transistor, and the height of the mesa () is greater than the height of the gate region (). This device can be manufactured inexpensively and easily by a method according to the invention, and the bipolar transistor can have excellent high-frequency characteristics.

Semiconductor device and method of manufacturing such a device

The invention relates to a method of manufacturing a semiconductor device () with a substrate () and a semiconductor body () which is provided with at least one bipolar transistor having an emitter region (), a base region () and a collector region (), wherein in the semiconductor body () a first semiconductor region () is formed that forms one () of the collector and emitter regions () and on the surface of the semiconductor body () a stack of layers is formed comprising a first insulating layer (), a polycrystalline semiconductor layer () and a second insulating layer () in which stack an opening () is formed, after which by non-selective epitaxial growth a further semiconductor layer () is deposited of which a monocrystalline horizontal part on the bottom of the opening () forms the base region () and of which a polycrystalline vertical part (A) on a side face of the opening () is connected to the polycrystalline semiconductor layer (), after which spacers (S) are formed parallel to the side face of the opening () and a second semiconductor region () is formed between said spacers (S) forming the other one () of the emitter and collector regions (). According to the invention the above method is characterized in that before the further semiconductor layer () is deposited, the second insulating layer () is provided with an end portion (A) that viewed in projection overhangs an end portion (A) of the underlying semiconductor layer (). In this way bipolar transistor devices can be obtained with good high frequency properties in a cost effective manner.

Method of manufacturing a semiconductor device and semiconductor device obtained with such a method

Growing community of inventors

Enschede, Netherlands

Joost Melai