Samsung Electronics Co., Ltd.

Jooseong Kim

Kwangho Kim

Sangho Kim

Junhyeok Yang

Yongjin Lee

Michael Choi

Tae-Hwang Kong

Jeongpyo Park

Junhee Shin

Sungmin Yoo

Haejung Choi

A semiconductor device including a bandgap reference generator that generates a reference voltage; a switch control voltage generator that generates a first reference current based on the reference voltage, and generates an adaptive switch level voltage by distributing the first reference current to a first path and a second path, the first path including a first resistor, and the second path including a second resistor and a first bipolar junction transistor connected in series; and a switch controller that generates a switch control signal for controlling switches included in the bandgap reference generator based on the adaptive switch level voltage. The adaptive switch level voltage has a slope with respect to temperature that is greater than a base-emitter voltage of the first bipolar junction transistor.

Switch control voltage generator, bandgap reference generator, and method for generating switch voltage thereof

A temperature measurement circuit includes a band-gap reference circuit configured to generate a band-gap reference voltage that is fixed regardless of an operation temperature, a reference voltage generator circuit configured to generate a measurement reference voltage by adjusting the band-gap reference voltage, a sensing circuit configured to generate a temperature-variant voltage based on a bias current, where the temperature-variant voltage is varied depending on the operation temperature, an analog-digital converter circuit configured to generate a first digital code indicating the operation temperature based on the measurement reference voltage and the temperature-variant voltage, and an analog built-in self-test (BIST) circuit configured to generate a plurality of flag signals indicating whether each of the band-gap reference voltage, the measurement reference voltage, and a bias voltage corresponding to the bias current is included in a predetermined range.

Built-in self-test circuit and temperature measurement circuit including the same

An electronic device including: a reference voltage generator circuit to generate a reference voltage based on a first and second voltage, the reference voltage generator circuit including: a first current source to supply a first current to each of a first and second node; an amplifier to amplify a difference between the first voltage of the first node and the second voltage of the second node and to output a difference voltage corresponding to the amplified difference; a first bipolar junction transistor (BJT) connected to the first node; a first resistor connected to the second node; a second BJT connected between the first resistor and ground; a second resistor connected between the second node and ground; and a first transistor to be supplied with a second current from the first current source; and an adaptive cascode circuit to generate a bias voltage applied to a gate of the first transistor.

Electronic device

Electronic device with a reference voltage generator circuit and an adaptive cascode circuit

A temperature sensing device includes a temperature-voltage converter that outputs a first voltage, having a zero temperature coefficient that does not vary with a temperature, and a second voltage having a negative temperature coefficient varying in inverse proportion to the temperature. A multiplexer alternately outputs the first voltage and the second voltage depending on a transition signal. A temperature sensor alternately receives the first voltage and the second voltage and senses the temperature depending on a ratio of the first voltage and the second voltage.

Temperature sensing device and temperature-voltage converter

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Seoul, South Korea

Jooseong Kim