Nederlandse Organisatie Voor Toegepast-natuurwetenschappelijk Onderzoek Tno

Agfa-gevaert

Joop Van Deelen

Freddy Roozeboom

Adrianus Johannes Petrus Maria Vermeer

Hieronymus Andriessen

Paulus Willibrordus George Poodt

Jan Kroon

Method of depositing an atomic layer on a substrate. The method comprises supplying a precursor gas from a precursor-gas supply of a deposition head that may be part of a rotatable drum. The precursor gas is provided from the precursor-gas supply towards the substrate. The method further comprises moving the precursor-gas supply by rotating the deposition head along the substrate which in its turn is moved along the rotating drum.

Method and apparatus for depositing atomic layers on a substrate

The invention relates to a method for treating a metal oxide layer deposited on a substrate. The method comprises the step of applying a substantially atmospheric plasma process at a relatively low temperature. Preferably, the temperature during the plasma process is lower than approximately 180&#xb0; C. Further, the atmospheric plasma process can be applied in a plasma chamber comprising Hgas and He gas.

Method for treating a metal oxide layer

A process for preparing a layer of a nano-porous metal oxide semiconductor comprising the steps of: (i) providing metal oxide semiconductor nano-particles prepared by a wet precipitation process, (ii) heating said nano-particles at a temperature in the range of 250 to 600&#xb0; C., (iii) preparing a dispersion of said heat-treated nano-particles from step (ii), (iv) applying said dispersion prepared in step (iii) to a support to produce a coating; and (v) subjecting said coating to a pressure in the range of 100 to 1000 bar at a temperature below 250&#xb0; C.; a layer of a nano-porous metal oxide semiconductor obtained by this process; and a photovoltaic device comprising a layer of a nano-porous metal oxide semiconductor obtained by this process.

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Eindhoven, Netherlands

Joop Van Deelen