Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Joonyong Park

Bongsu Shin

Sunghoon Lee

Jaeseung Chung

Dongouk Kim

Jihyun Bae

Hyunjoon Kim

Seogwoo Hong

Dongsik Shim

Kyungwook Hwang

Junsik Hwang

Hongseok Lee

Dongmin Lee

Kyungseop Kim

Sangwon Shin

Hoon Song

Dongho Kim

Hyuneok Shin

Byeong-Beom Kim

Dongkyun Kim

Chilsung Choi

Sunil Kim

Geeyoung Sung

Jungkwuen An

Sanggab Kim

Sangwook Lee

Hoon Jong Kang

Taehyung Kim

Hyang-Shik Kong

Yu-Gwang Jeong

Yoonsun Choi

Yeogeon Yoon

Changhee Lee

Taewook Kang

Sukgyu Hahm

Changoh Jeong

Jong G Ok

Ilsun Yoon

Honglong Ning

Alexander Victorovich Morozov

Gugrae Jo

Seokho Song

Sukyoung Yang

Daeyoung Lee

Samtae Jeong

Shin Il Choi

Sanghoon Song

Changsoo Lee

Hyun-Ho Kang

Yunhee Kim

Juhyun Lee

Jungha Son

Yunjong Yeo

Jinho Ju

Sangwoo Sohn

Dokeun Song

Taekyung Yim

Joon Woo Bae

Yung Bin Chung

Youngtek Oh

Hyungjune Kim

Seungwook Chang

Taesung Jung

Yungbin Chung

Chanwoo Yang

Gwan Ha Kim

Hyunju Kang

Minchul Yu

Youngrok Kim

Jinho Hwang

Youngju Jeong

Taeho Kang

Jinwook Jeong

Sungjoo Kwon

Joonwoo Bae

A display device includes: a wiring line on a first inorganic insulating layer; a second inorganic insulating layer covering the wiring line; and a display element on the second inorganic insulating layer, wherein the wiring line includes: a lower layer including at least one of aluminum (Al) or an aluminum (Al) alloy; an upper layer on the lower layer and including a niobium titanium (NbTi) alloy; and an intermediate layer arranged between the lower layer and the upper layer and including at least one of a niobium titanium aluminum (NbTiAl) alloy or a titanium aluminum (TiAl) alloy.

Display device and method of manufacturing the display device

A display device includes a substrate, a metal pattern on the substrate, the metal pattern including a first alloy layer and a first metal layer, wherein the first alloy layer includes a titanium alloy including at least one of copper or zinc and the first metal layer is on the first alloy layer, an active layer on the metal pattern and a gate electrode on the active layer, the gate electrode including a second alloy layer and a second metal layer, wherein the second alloy layer includes a titanium alloy including at least one of copper or zinc and the second metal layer is on the second alloy layer.

Display device and method of manufacturing the same

A semiconductor chip wet transfer method includes: preparing a transfer substrate that includes a plurality of recesses; supplying a liquid that includes semiconductor chips onto the plurality of recesses of the transfer substrate; aligning the semiconductor chips in the plurality of recesses by sweeping, with an align bar, an upper surface of the transfer substrate supplied with the liquid; and performing cleaning by removing semiconductor chips that are not aligned in the plurality of recesses by using a first magnetic force generating device disposed facing a lower surface of the transfer substrate.

Chip wet transfer method and equipment using magnetic force

A display transfer structure includes a base layer, a flexible barrier rib positioned on the base layer and having a plurality of holes therein, and a plurality of micro light emitting diodes (LEDs) positioned respectively in the plurality of holes. A method of manufacturing the display transfer structure includes forming a flexible barrier rib having holes on a base layer, supplying liquid to the holes, supplying micro LEDs to the liquid, and scanning the flexible barrier rib with an absorber capable of absorbing the liquid to align each of the micro LEDs in a respective hole such that electrodes of the micro LEDs face an outside of the holes.

Display transfer structure and method of manufacturing the same

Provided is a display transfer structure including a substrate including a plurality of wells, and a plurality of light emitting elements disposed in the plurality of wells, wherein the plurality of light emitting elements have a rotationally asymmetric planar shape, and wherein the plurality of wells respectively have a planar shape different from a planar shape of each of the plurality of light emitting elements.

Display transfer structure including light emitting elements and transferring method of light emitting elements

A micro light-emitting element includes a first conductivity type semiconductor layer including a lower surface on which an uneven pattern is formed, an active layer provided on the first conductivity type semiconductor layer, a second conductivity type semiconductor layer provided on the active layer, at least one electrode provided on the second conductivity type semiconductor layer, and a transparent coating layer including a first surface covering the lower surface of the first conductivity type semiconductor layer, and a second surface facing the first surface and having a second surface roughness that is less than a first surface roughness of the lower surface of the first conductivity type semiconductor layer.

Micro light-emitting element, micro light-emitting element array including the micro light-emitting element, and display device including the micro light-emitting element array

A device transfer substrate includes a plurality of recesses, wherein each of the plurality of recesses includes a first region having a shape of a first figure, a second region having a shape of a second figure, and an overlapping region formed as a portion of the first region partially overlaps a portion of the second region, wherein a maximum width of the overlapping region in a direction intersecting with a straight line passing through a center of the first figure and a center of the second figure is less than a diameter or a diagonal length of the first figure and less than a diameter or a diagonal length of the second figure.

Device transfer substrate receiving a light emitting device, device transfer structure, and display apparatus

A method of manufacturing a micro-light-emitting diode (LED) array includes: providing a first substrate including a plurality of circular grooves formed on a first surface thereof; supplying a plurality of micro-LEDs onto the first surface of the first substrate; and aligning the plurality of micro-LEDs with the plurality of circular grooves, wherein at least two electrodes are formed on a second surface of each of the plurality of micro-LEDs to be apart from each other, and the at least two electrodes include a first electrode formed to be relatively close to a center of the second surface and at least one second electrode formed at an edge of the second surface.

Micro-light-emitting-diode array and method of manufacturing the same

A display apparatus includes a first insulating layer, a conductive pattern disposed directly on the first insulating layer, a cladding pattern disposed on side surfaces of the conductive pattern, and a second insulating layer on the conductive pattern and the cladding pattern, wherein the cladding pattern includes a first cladding layer including a first material and a second cladding layer including a second material different from the first material.

Display apparatus and method of manufacturing the same

A light-emitting device may include a light-emitting cell emitting first-color light and second-color light, an insulating layer having a flat upper surface while covering the light-emitting cell, a first trench exposing a first semiconductor layer, a second trench exposing a second semiconductor layer, a first electrode in contact with the first semiconductor layer, a second electrode in contact with the second semiconductor layer, and a third electrode in contact with a third semiconductor layer.

Light-emitting device and display apparatus including the same

Provided is a light-emitting device including a body including a first semiconductor layer, an active layer, and a second semiconductor layer, a first electrode and a second electrode provided on a first surface of the body, the first electrode and the second electrode being in contact with the first semiconductor layer and the second semiconductor layer, respectively, and a third electrode and a fourth electrode provided on a second surface of the body, the third electrode and the fourth electrode being in contact with the first semiconductor layer and the second semiconductor layer, respectively.

A micro-semiconductor chip wet alignment apparatus is provided. The micro-semiconductor chip wet alignment apparatus includes a semiconductor chip wet supply module configured to supply the plurality of micro-semiconductor chips and a liquid onto the transfer substrate so that the plurality of micro-semiconductor chips are flowable on the transfer substrate; and a chip alignment module including an absorber capable of relative movement along a surface of the transfer substrate and configured to absorb the liquid so that the plurality of micro-semiconductor chips are aligned in the plurality of grooves.

Micro-semiconductor chip wetting alignment apparatus

A sputtering target includes a first target part and a second target part both including a metal oxide and adjacent to each other and a target dividing part disposed between a first target part and a second target part. The target dividing part includes a same metal element as a metal element included in a first target part and a second target part. Therefore, size and/or length of the sputtering target may be increased. Thus, efficiency of a manufacturing process of the sputtering target is improved and a manufacturing cost is reduced. In addition, even after a thin film is deposited on a target substrate using the sputtering target, stains caused by sputtering of non-uniform amounts of metal elements by location on the target substrate do not occur on a target substrate. In addition, the uniformity of a thin film deposited on a target substrate is secured by using the sputtering target. Thus, process quality of a sputtering process is improved.

Sputtering target and sputtering apparatus including the same

Provided is a dispenser for a solution including a reservoir configured to hold a suspension of micro light-emitting diodes (LEDs) suspended in a solvent; a stirrer configured to stir the suspension in the reservoir; a discharge path including a first valve configured to control outflow of the suspension from the reservoir; a filling path including a second valve configured to control inflow of the suspension into the reservoir; a hydraulic path including a third valve configured to control a pressure inside the reservoir; and a washing path connected to the first valve and configured to input a washing fluid for washing the discharge path into the discharge path, wherein the first valve includes a multi-way valve configured to selectively connect the discharge path to one of the reservoir and the washing path.

Dispenser for micro LED suspension and method of transferring micro LED

Provided is a method of manufacturing a micro light emitting device array. The method includes forming a display transfer structure including a transfer substrate and a plurality of micro light emitting devices, where the transfer substrate includes at least two first alignment marks; preparing a driving circuit board, the driving circuit board including a plurality of driving circuits and at least two second alignment marks, arranging the display transfer structure and the driving circuit board to face each other so that the at least two first alignment marks and the at least two second alignment marks face one another and bonding the plurality of micro light emitting devices of the display transfer structure to the plurality of driving circuits.

Micro light emitting device array and method of manufacturing the same preliminary class

Growing community of inventors

Suwon-si, South Korea

Joonyong Park