Samsung Electronics Co., Ltd.

Joonsik Sohn

Un-Byoung Kang

Chungsun Lee

Jung-Seok Ahn

Jung-Hwan Kim

Kwang-Chul Choi

Seunghyun Cho

Hyunjoong Kim

Jihyun Choi

Jeon Il Lee

Soowoong Ahn

Woongjae Song

Taeje Cho

According to some example embodiments of the inventive concepts, there is provided a method of operating a stacked memory device including a plurality of memory dies stacked in a vertical direction, the method including receiving a command and an address from a memory controller, determining a stack ID indicating a subset of the plurality of memory dies by decoding the address, and accessing at least two memory dies among the subset of memory dies corresponding to the stack ID such that the at least two memory dies are non-adjacent.

Stacked memory device and operating method thereof

Provided are methods of fabricating a semiconductor device. According to the method, a first glue layer, a first release layer, a second glue layer, and a second release layer may be sequentially interposed between a carrier and a device wafer. All of the first glue layer, the first release layer, the second glue layer, and the second release layer may be formed of thermosetting resin.

Method of fabricating a semiconductor device

A method for processing substrates includes providing a bonding layer between a substrate and a carrier to bond the substrate to the carrier, processing the substrate while the substrate is supported by the carrier, and removing the bonding layer to separate the substrate from the carrier. The bonding layer may include a thermosetting release layer and thermosetting glue layers, wherein at least one of the thermosetting glue layers is provided on each side of the thermosetting release layer.

Methods for processing substrates

Growing community of inventors

Yongin-si, South Korea

Joonsik Sohn