Samsung Display Co., Ltd.

Joongeol Lee

Sanggab Kim

Kyeongsu Ko

Shinil Choi

Hyuneok Shin

Dongmin Lee

Sangwon Shin

Sangwoo Sohn

Dokeun Song

Sukyoung Yang

Wooyong Sung

Taewook Kang

Kyeong Su Ko

Sang Gab Kim

Taehyun Kim

Yu-Gwang Jeong

Seunghwan Cho

Jungkyu Lee

Suyeon Sim

Dohyun Kwon

Yunjong Yeo

Hongsick Park

Subin Bae

Jongmo Yeo

A display panel includes a substrate having an opening area, and a display area at least partially surrounding the opening area. Display elements are arranged in the display area. The display elements includes a pixel electrode, an opposite electrode, and an intermediate layer interposed therebetween. A multilayer film includes a first insulating layer between the substrate and the pixel electrode and a second insulating layer, of a different material, on the first insulating layer. A thin film encapsulation layer covers the display elements and includes at least one organic encapsulation layer and at least one inorganic encapsulation layer. The multilayer film includes a first groove disposed between the opening area and the display area. The first groove has an undercut structure in which a lower width of the first groove is greater than an upper width of the first groove.

Display panel and display device including display panel

A display panel including a glass substrate having an opening area, and a display area at least partially surrounding the opening area; a thin film transistor on the display area including a semiconductor layer and a gate electrode; a display element electrically connected to the thin film transistor; a multi-layer including an insulating layer and a lower insulating layer. The insulating layer is between the glass substrate and the display element and the lower insulating layer is between the glass substrate and the insulating layer; and a thin-film encapsulation layer covering the display element including an inorganic encapsulation layer and an organic encapsulation layer. The multi-layer includes a first groove between the opening area and the display area. A first width of a portion of the first groove in the lower insulating layer is greater than a second width of a portion of the first groove in the insulating layer.

Display panel, and display device including the same

A conductive line for a display device may include a first layer including aluminum (Al) or an aluminum alloy, a second layer disposed on the first layer, the second layer including titanium nitride (TiN), and a third layer disposed on the second layer, the third layer including titanium (Ti) and having a multilayer structure including a plurality of stacked sub-layers.

Method of manufacturing conductive line for display device including the same

A display panel includes a base layer, a signal line which is disposed on the base layer and includes a first layer including aluminum and a second layer disposed directly on the first layer and consisting of niobium, a first thin film transistor connected to the signal line, a second thin film transistor disposed on the base layer, a capacitor electrically connected to the second thin film transistor, and a light emitting element electrically connected to the second thin film transistor.

Display panel including a signal line having a two-layer structure, and method for manufacturing the same

Conductive line for display device and display device including the same

An OLED device includes a substrate, a first active layer, a first gate electrode, a second gate electrode, first source and first drain electrodes, a first high dielectric constant (high-k) insulation structure, and a light emitting structure. The substrate has a first region and a second region. The first active layer is disposed in the first region on the substrate. The first gate electrode is disposed on the first active layer, and has a first thickness. The second gate electrode is disposed on the first gate electrode. The first source electrode and first drain electrode are disposed on the second gate electrode, and constitutes a first semiconductor element together with the first active layer and the first gate electrode. The first high-k insulation structure is disposed between the first gate electrode and the second gate electrode, and is spaced apart from the first source electrode and first drain electrode.

Organic light emitting display device and method of manufacturing organic light emitting display device

A display device includes a first signal line including a first layer disposed on a substrate and containing aluminum (Al), a second layer disposed on the first layer and containing titanium nitride (TiN), and a third layer disposed on the second layer and containing titanium (Ti), a second signal line crossing the first signal line, a first transistor including a first gate electrode connected to the first signal line and a first source electrode connected to the second signal line, and an organic light emitting diode disposed in a display area of the substrate to generate light corresponding to a data signal applied to the second signal line.

Display device and method of manufacturing the display device

A thin film transistor (TFT) array substrate and organic light-emitting diode (OLED) display including the same are disclosed. In one aspect, the array substrate includes a substrate, a driving TFT formed over the substrate and including a driving gate electrode, and a storage capacitor including a first electrode electrically connected to the driving gate electrode and a second electrode formed over and insulated from the first electrode. The array substrate also includes an interlayer insulating film at least partially covering the first electrode and a driving voltage line formed over the interlayer insulating film and configured to supply a voltage to the driving TFT. The driving voltage line is formed on the same layer as the second electrode.

Thin film transistor array substrate and organic light-emitting diode display including the same

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Yongin-si, South Korea

Joongeol Lee