Samsung Display Co., Ltd.

Joongeol Kim

Woogeun Lee

Jiyun Hong

Youngjae Jeon

Seungsok Son

Seokhwan Bang

Hyunseong Kang

Jongin Kim

Do-Hyun Kim

Wonhee Lee

Jaehyun Lee

Kap Soo Yoon

Sang-Moon Moh

Woo Geun Lee

Gwang-bum Ko

Jongmoo Huh

Seulki Kim

Kwangsoo Lee

Soojung Chae

Keum Hee Lee

Kapsoo Yoon

Seungrae Kim

Donghoon Shin

Junewhan Choi

Kisu Jin

Youngjoo Choi

GwonHeon Ryu

Seung-ha Choi

A display apparatus includes a substrate including a display area and a peripheral area outside the display area, a thin film transistor arranged on the substrate corresponding to the display area and including a semiconductor layer and a gate electrode, a pad electrode arranged on the substrate corresponding to the peripheral area and including a material the same as that of the semiconductor layer, and a first insulating layer arranged on the thin film transistor and the pad electrode and including an opening that partially exposes the pad electrode. Accordingly, failure to perform a normal operation by a pixel circuit and a light-emitting element may be prevented.

Display apparatus with exposed pad electrode

A display apparatus includes a substrate including a display area and a peripheral area adjacent to the display area, a thin-film transistor located in the display area of the substrate and including a semiconductor layer and a gate electrode overlapping a channel region of the semiconductor layer, a conductive layer disposed between the substrate and the semiconductor layer and including a first electrode located in the display area of the substrate and a pad electrode located in the peripheral area of the substrate, and a first insulating layer disposed between the conductive layer and the semiconductor layer and having a first opening that exposes at least a portion of an upper surface of the pad electrode.

Display apparatus and method of manufacturing the same

A method of manufacturing a thin film transistor includes: forming an active pattern on a substrate; forming an insulating layer and a gate electrode layer on the active pattern in order; forming a photoresist pattern on the gate electrode layer; forming a preliminary gate electrode by wet etching the gate electrode layer using the photoresist pattern; forming an insulating pattern by dry etching the insulating layer using the photoresist pattern and the preliminary gate electrode; and forming a gate electrode by wet etching a side surface of the preliminary gate electrode using the photoresist pattern.

Method of manufacturing thin film transistor, method of manufacturing display apparatus and thin film transistor substrate

A thin film transistor substrate includes a substrate; a gate electrode on the substrate; a semiconductor pattern on the gate electrode; a source electrode on the semiconductor pattern; a drain electrode on the semiconductor pattern and spaced apart from the source electrode; a pixel electrode connected to the drain electrode; and a common electrode partially overlapped with the pixel electrode. The semiconductor pattern is in a same layer of the thin film transistor substrate as the pixel electrode and has an electrical property different from an electrical property of the pixel electrode.

Thin film transistor substrate and method of manufacturing the same

Growing community of inventors

Seoul, South Korea

Joongeol Kim