Samsung Electronics Co., Ltd.

Joong-Yun Ra

Jae-young Ahn

Dong-Chul Yoo

Hun-hyeong Lim

Jeon-Il Lee

Young-jin Noh

Guk-Hyon Yon

Kwang-Min Park

Ju-Mi Yun

Young-Seon Son

A semiconductor device is provided as follows. A tunnel insulation layer is disposed on a substrate. The tunnel insulation layer includes a first silicon oxide layer, a second silicon oxide layer, and a silicon layer interposed between the first silicon oxide layer and the second silicon oxide layer. The silicon layer has a thickness smaller than a thickness of each of the first silicon oxide layer and the second silicon oxide layer. A gate pattern is disposed on the tunnel insulation layer.

Semiconductor devices and methods of manufacturing the same

Non-volatile semiconductor devices

Growing community of inventors

Seoul, South Korea

Joong-Yun Ra