Samsung Electronics Co., Ltd.

Joong Won Jeon

Sung Min Kim

Jae Myoung Lee

Gyeongseop Kim

Jeong Lim Kim

Yeon Hwa Lim

Myoung Ho Kang

Heung Suk Oh

A semiconductor device comprises a first fin-type pattern comprising a first long side extending in a first direction, and a first short side extending in a second direction. A second fin-type pattern is arranged substantially parallel to the first fin-type pattern. A first gate electrode intersects the first fin-type pattern and the second fin-type pattern. The second fin-type pattern comprises a protrusion portion that protrudes beyond the first short side of the first fin-type pattern. The first gate electrode overlaps with an end portion of the first fin-type pattern that comprises the first short side of the first fin-type pattern. At least part of a first sidewall of the first fin-type pattern that defines the first short side of the first fin-type pattern is defined by a first trench having a first depth. The first trench directly adjoins a second trench having a second, greater, depth.

Semiconductor device having a plurality of fins and method of fabricating the same

Semiconductor device having first and second fin-type patterns and method of fabricating the same

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Seoul, South Korea

Joong Won Jeon