Samsung Led Co., Ltd.

Samsung Electronics Co., Ltd.

Joong-kon Son

Ho-sun Paek

Sung-nam Lee

Tan Sakong

Kyoung-ho Ha

Seoung-jae Im

Youn-joon Sung

Han-youl Ryu

Ok-hyun Nam

Tae-hoon Jang

Hee-Seok Park

Jong-pa Hong

Hyoung-cheol Cho

Jong-Pa Hong

A head lamp assembly including a housing; a plurality of head lamp cases installed in the housing, wherein each head lamp case comprises a light emitting diode (LED) light source, and a heat sink for dissipating heat generated from the LED light source; and a plurality of ventilating fans for circulating air in the plurality of head lamp cases and installed in the plurality of head lamp cases, respectively. Accordingly, the ventilating fans installed in the head lamp cases have opposite ventilating directions, and thus air is circulated in the head lamp cases by the ventilating fans to thus improve heat dissipation effects.

Head lamp assembly and vehicle including the same

A nitride-based semiconductor light emitting device having a structure capable of improving optical output performance, and methods of manufacturing the same are provided. The active layer may include a first barrier layer formed of InGaN (0.01&#x2266;x&#x2266;0.05) on a n-type semiconductor layer, a first diffusion barrier layer formed of InGaN (0&#x2266;y&#x3c;0.01) on the first barrier layer, and doped with an anti-defect agent including at least one of an N (nitrogen) element and a Si (silicon) element, a quantum well layer formed of InGaN (0.25&#x2266;z&#x2266;0.35) on the first diffusion barrier layer, a second diffusion barrier layer formed of InGaN (0&#x2266;y&#x3c;0.01) on the quantum well layer, and doped with an anti-defect agent including at least one of an N element and a Si element, and a second barrier layer formed of InGaN (0.01&#x2266;x&#x2266;0.05) on the second diffusion barrier layer. The nitride-based semiconductor light emitting device may include an n-type semiconductor layer, the active layer, and a p-type semiconductor layer that are sequentially stacked on a substrate.

Nitride-based semiconductor light emitting device and methods of manufacturing the same

A semiconductor light-emitting device including an active layer is provided. The light-emitting device includes an active layer between an n-type semiconductor layer and a p-type semiconductor layer. The active layer includes a quantum well layer formed of InGaN, where 0&#x3c;x&#x2266;1, barrier layers formed of InGaN, where 0&#x2266;x&#x3c;1, on opposite surfaces of the quantum well layer, and a diffusion preventing layer formed between the quantum well layer and at least one of the barrier layers. Due to the diffusion preventing layer between the quantum well layer and the barrier layers in the active layer, the light emission efficiency increases.

Semiconductor light-emitting device

Provided is a laser display device. The laser display device may include at least one light source configured to emit at least one laser beam, at least one scanning unit configured to perform a scanning with the at least one laser beam, and an image forming unit configured to generate excitation light and scattering light by receiving the at least one laser beam from the scanning unit to form an image.

Laser display device employing blue laser diode

A semiconductor substrate includes a first semiconductor layer and a second semiconductor layer. The first semiconductor layer is formed of II-VI-group semiconductor material, III-V-group semiconductor material, or II-VI-group semiconductor material and III-V-group semiconductor material. At least one amorphous region and at least one crystalloid region are formed in the first semiconductor layer. The second semiconductor layer is formed on the first semiconductor layer and is crystal-grown from the at least one crystalloid region. A method of manufacturing a semiconductor substrate includes preparing a growth substrate; crystal-growing the first semiconductor layer on the growth substrate; forming the at least one amorphous region and the at least one crystalloid region in the first semiconductor layer; and forming a second semiconductor layer on the first semiconductor layer using the at least one amorphous region as a mask and the at least one crystalloid region as a seed.

Semiconductor substrates having low defects and methods of manufacturing the same

Laser display device including first and second scanners

A III-V Group GaN-based compound semiconductor device with an improved structure having low current comsumption, high optical output, and a long lifetime is provided. The III-V Group GaN-based compound semiconductor device includes an active layer and a first clad layer and a second clad layer, wherein at least one of the first clad layer and the second clad layer has a superlattice structure formed of a plurality of alternating AlGaN layers (0&#x3c;x&#x3c;1) and GaN layers, and the composition ratio of aluminum of the AlGaN layers decreases at a predetermined rate away from the active layer.

III-V group GaN-based compound semiconductor device

Provided is a semiconductor opto-electronic device that may comprise an active layer including a quantum well and a barrier layer on a substrate, upper and lower waveguide layers on and underneath the active layer, respectively, and upper and lower clad layers on and underneath the upper and lower waveguide layers, respectively. The semiconductor opto-electronic device may further comprise an upper optical confinement layer (OCL) between the active layer and the upper waveguide layer and having an energy gap smaller than the energy gap of the upper waveguide layer and equal to or larger than the energy gap of the barrier layer, and a lower OCL between the active layer and the lower waveguide layer and having an energy gap smaller than the energy gap of the lower waveguide layer and equal to or smaller than the energy gap of the barrier layer. Also provided is a method of fabricating the semiconductor opto-electronic device.

Semiconductor optoelectronic device and method of fabricating the same

A ridge-waveguide semiconductor laser diode with an improved current injection structure is provided. The ridge-waveguide semiconductor laser diode includes: a substrate; a lower multi-semiconductor layer formed on the substrate; an active layer formed on the lower multi-semiconductor layer; an upper multi-semiconductor layer having a ridge portion and formed on the active layer; and an upper electrode formed on the upper multi-semiconductor layer, wherein the upper electrode covers at least one side surface of the ridge portion.

Growing community of inventors

Yongin-si, South Korea

Joong-kon Son