Samsung Electronics Co., Ltd.

Joong-han Shin

Bong-jin Kuh

Han-Mei Choi

Ki-chul Kim

Dmitry Mikulik

Wanit Manorotkul

Gil-heyun Choi

Byung-Lyul Park

Pil-Kyu Kang

Eun-ha Lee

Jong-sung Lim

Supakit Charnvanichborikarn

Jae-hee Lee

Jeong-meung Kim

A laser annealing apparatus includes a laser oscillating structure, an oscillator, a beam expanding telescope, a first power meter, and a second power meter. The laser oscillating structure emits a first laser beam of a first wavelength and first beam cross-section to a substrate in a chamber including an optical window. The oscillator emits a second laser beam, of a second wavelength different from the first wavelength, to the substrate. The beam expanding telescope is on an optical path for the second laser beam and expands the second laser beam to a second beam cross-section. The first and second power meters measure energy of the second laser beam and a third laser beam, generated as the second laser beam is reflected by the substrate. The first beam cross-section and the second beam cross-section may be equal.

Laser annealing apparatus for semiconductors having multiple laser energy measuring means

An IC device includes a polycrystalline silicon thin film interposed between a first level semiconductor circuit and a second level semiconductor circuit which are formed on a substrate and disposed to vertically overlap each other. The polycrystalline silicon thin film includes at least one silicon single crystal. The at least one silicon single crystal includes a flat horizontal portion, which provides an active region of the second level semiconductor device, and a pin-shaped protruding portion protruding from the flat horizontal portion toward the first level semiconductor device.

Integrated circuit device including polycrystalline semiconductor film and method of manufacturing the same

A method of forming an epitaxial layer includes forming a plurality of first insulation patterns in a substrate, the plurality of first insulation patterns spaced apart from each other, forming first epitaxial patterns on the plurality of first insulation patterns, forming second insulation patterns between the plurality of first insulation patterns to contact the plurality of first insulation patterns, and forming second epitaxial patterns on the second insulation patterns and between the first epitaxial patterns to contact the first epitaxial patterns, the first epitaxial patterns and the second epitaxial patterns forming a single epitaxial layer.

Methods of forming epitaxial layers

An optical input/output (I/O) device is provided. The device includes a substrate including an upper trench; a waveguide disposed within the upper trench of the substrate; a photodetector disposed within the upper trench of the substrate and comprising a first end surface optically connected to an end surface of the waveguide; and a light-transmitting insulating layer interposed between the end surface of the waveguide and the first end surface of the photodetector.

Optical input/output device and method of fabricating the same

Growing community of inventors

Yongin-si, South Korea

Joong-han Shin