Lg Display Co., Ltd.

Lg Philips Lcd Co., Inc.

Lf Gisplay Co., Ltd.

Joon Young Yang

Yong In Park

Sang Hyun Kim

Jae Young Oh

Dong Su Shin

Jae Kyun Lee

Jung Il Lee

Kum Mi Oh

Soopool Kim

Young Kwon Kang

Sang Min Jang

Su Seok Choi

Hun Jang

Jae Beom Choi

Jeong Oh Kim

Soo Pool Kim

Jung Ii Lee

Sang Jin Lee

Yu Kyeong Ahn

Gyu Tae Kang

Jung Ho Bang

A thin film transistor substrate includes: pluralities of gate lines and data lines arranged to define a plurality of pixel regions, and a plurality of thin film transistors formed on the pixel regions in such a manner as to include first and second thin film transistors connected to the same gate line and the pixel regions adjacent to each other. Each of the first and second thin film transistors includes: a gate electrode connected to the gate line; a semiconductor layer formed on the gate line in an octagon shape; a source electrode connected to the data line; and a drain electrode formed in an opposite shape to the source electrode.

Thin film transistor substrate

Provided are a display device and a fabricating method thereof. The display device includes a substrate, a gate line, a common line, common electrodes, an insulating layer, a data line, a drain electrode, and pixel electrodes. The gate line is disposed in a first direction. The common line is disposed substantially parallel to the gate line. The common electrodes branch from the common line. The insulating layer covers the gate line, the common line, and the common electrodes. The channel patterns are disposed on the insulating layer to correspond to the gate electrode. The data line is disposed in a second direction. The drain electrode is electrically connected with the channel pattern. The pixel electrodes are formed of an opaque metal. Thus, the display device may improve contrast ratio.

Display device with realized a high contrast ratio and method for fabricating the same

A method of fabricating a liquid crystal display device includes forming first, second, and third active patterns on a substrate having a pixel region and a driving region, wherein the first and second active patterns are in the driving region and the third active pattern is in the pixel region, the first, second, and third active patterns each having an active region, a source region, and a drain region with the source and drain regions on opposing sides of the active region, forming a gate insulator on the first, second, and third active patterns, forming first, second, and third gate electrodes on the gate insulator, wherein the first, second, and third gate electrodes correspond to the active regions of the first, second, and third active patterns, respectively, doping the source and drain regions of the first, second, and third active patterns with n&#x2212; ions using the first, second, and third gate electrodes as a doping mask, doping the n&#x2212; doped source and drain regions of the second active pattern with p+ ions, forming an interlayer insulating film on the first, second, and third gate electrodes and patterning the interlayer insulating film to form contact holes exposing each source and drain regions of the first, second, and third active patterns, and doping the source and drain regions of the first, second, and third active patterns with n+ ions through the contact holes.

Liquid crystal display device and fabricating method thereof

A liquid crystal display device is provided. The liquid crystal display device includes a gate line and a data line formed on a substrate; a thin film transistor formed at an intersection of the gate line and the data line; a pixel electrode connected to the thin film transistor; a common electrode substantially parallel to the pixel electrode; and a conductive pattern in contact with the common electrode at a lateral side surface of the common electrode.

Liquid crystal display device and method of fabricating the same

An in-plane switching mode LCD having a plurality of pixels arranged in a matrix includes a gate line formed on a lower substrate, a data line formed such that the data line intersect the gate line to define a pixel region, a TFT (Thin Film Transistor) formed at the intersection of the gate line and the data line, a pixel electrode connected to the TFT, a common electrode to generate a horizontal electric field with the pixel electrode, and a common line supplying common voltage to the common electrode, wherein the common line comprises a first common line formed parallel to the gate line, a second common line formed parallel to the date line in a side portion of the pixel region adjacent to the data line, and a third common line formed parallel to the gate line and disposed between a first row and a second row of the matrix.

In-plane switching mode liquid crystal display device and method for fabricating the same

The present invention relates a method for forming a pattern includes the steps of forming a thin film on a substrate, coating a photoresist film on the thin film, aligning a mask over the photoresist film, the mask formed on a base material, including a light shielding portion having a linear supporting portion and an uneven portion at a boundary of the supporting portion, and a transmission portion defined at regions excluding the light shielding portion, exposing the photoresist film with the mask thereon to a UV beam of a wavelength greater than 300nm to cause refraction in the vicinity of the uneven portion, and developing the photoresist film exposed thus to form a photoresist film pattern, and patterning the thin film by using the photoresist film pattern thus formed.

Exposing device, methods for forming pattern, channel, and hole by using the same, and liquid crystal display device therewith and method for fabricating the same

A method of fabricating a liquid crystal display device includes forming a gate electrode; forming a gate insulator on the gate electrode, an active layer on the gate insulator, and an etch stopper on the active layer; depositing an ohmic contact layer, a first metal layer and a second metal layer on the substrate; etching the ohmic contact layer, and the first and second metal layers to form ohmic contact patterns, and first and second metal patterns including source, drain and pixel electrodes using a single photomask.

Thin film transistor substrate and method of manufacturing the same

An in-plane switching mode LCD having a plurality of pixels arranged in a matrix includes a gate line formed on a lower substrate, a data line formed such that the data line intersect the gate line to define a pixel region, a TFT (Thin Film Transistor) formed at the intersection of the gate line and the data line, a pixel electrode connected to the TFT, a common electrode to generate a horizontal electric field with the pixel electrode, and a common line supplying common voltage to the common electrode, wherein the common line comprises a first common line formed parallel to the gate line in a lower portion of the pixel region, a second common line formed parallel to the date line in a side portion of the pixel region adjacent to the data line, and a third common line formed parallel to the gate line in a upper portion of the pixel region, and wherein the data line comprises a pair of sub-lines facing directly with each other in every two pixel regions.

A method of fabricating a thin film transistor substrate for reducing a mask process and, at the same time removing a transparent electrode ITO which remains at a non-display area by a contact hole filling process is disclosed. In the method of fabricating the thin film transistor substrate having a display area and a non-display area, a gate pattern is formed at the exterior of the display area. A gate insulating film is formed on a substrate provided with a gate pattern, and then a data pattern is formed. And a protective film is formed on an entire substrate provided with a data pattern, and then a conductive pattern, and then a conductive pattern, which is comprised of a pixel electrode which is formed at a display area, and a lower gate pad electrode and a lower data pad electrode which are formed at a non-display area, is formed.

Method for fabricating thin film transistor substrate

A fabrication method of an LCD includes providing a substrate having a first region and a second region; forming a storage line in the first region and an active pattern in the second region of the substrate; forming a first insulation film on the substrate; forming a gate electrode and a pixel electrode on the substrate; forming a second insulation film on the substrate; and forming a source electrode and a drain electrode, the source electrode connected to a source region via a contact hole and the drain electrode connected to a drain region through the contact hole. The fabrication method may obtain a sufficient storage capacitance with a simplified process. The number of masks used for fabrication of a thin film transistor (TFT) may be reduced.

Method for fabricating a liquid crystal display device wherein the storage electrode is simultaneously formed with the active pattern

A liquid crystal display device may comprise a semiconductor layer on a substrate and including a channel portion and ohmic contact portions at both sides of the channel portion, wherein an edge portion of the semiconductor layer has a side surface of a substantially tapered shape; a gate insulating layer covering the semiconductor layer; a gate electrode on the gate insulating layer and substantially corresponding to the channel portion; source and drain electrodes contacting the semiconductor layer; and a pixel electrode contacting the drain electrode.

A method of fabricating a liquid crystal display device includes forming an active pattern and a data line on a substrate, forming a first insulating layer on the data line, forming a second insulating layer on the substrate, forming a gate electrode on the second insulating layer above the active pattern, forming a third insulating layer on the substrate, forming first and second contact holes through the second and third insulating layers to expose first and second portions of the active pattern, and forming a third contact hole through the first, second, and third insulating layers exposing a portion of the data line, respectively, and forming source and drain electrodes on the third insulating layer, the source electrode connected to the first exposed portion of the active pattern through the first contact hole and connected to the first exposed portion of the data line through the third contact hole, and the drain electrode connected to the second exposed portion of the active pattern through the second contact hole.

A transflective-type liquid crystal display device includes a plurality of gate and data lines crossing each other on a substrate to define a plurality of pixel regions, a thin film transistor at each crossing of the gate and data lines, the thin film transistor including a semiconductor layer, and source and drain electrodes contacting source and drain regions, respectively, a projection seed pattern within the pixel region along a same layer as the semiconductor layer of the thin film transistor, and a reflective electrode contacting the drain electrode of the thin film transistor and having a reflective projection corresponding to the projection seed pattern.

Growing community of inventors

Gyeonggi-do, South Korea

Joon Young Yang