Cheil Industries Inc.

Samsung Sdi Co., Inc.

Joon-Young Moon

Yun-Jun Kim

Chung-Heon Lee

Yong-Woon Yoon

Hyun-Ji Song

Yoo-Jeong Choi

You-Jung Park

Hea-Jung Kim

Young-Min Kim

Youn-Jin Cho

Sung-Jae Lee

Youn-Hee Nam

Yu-Shin Park

Sung-Hwan Kim

Chul-Ho Lee

Seung-Hee Hong

Go-Un Kim

Seung-Wook Shin

Yo-Choul Park

Mi-young Kim

Sang-Kyun Kim

Bum-Jin Lee

A monomer for a hardmask composition is represented by the following Chemical Formula 1, 

Monomer for hardmask composition and hardmask composition including the monomer and method of forming patterns using the hardmask composition

A hardmask composition includes a polymer including a moiety represented by the following Chemical Formula 1 and a solvent.*-A-B&#x2014;*&#x2003;&#x2003;[Chemical Formula 1] In the Chemical Formula 1, A and B are the same as defined in the detailed description.

Hardmask composition and method of forming patterns using the hardmask composition

Disclosed are a monomer for a hardmask composition represented by the following Chemical Formula 1, a hardmask composition including the monomer, and a method of forming patterns using the hardmask composition. 

Monomer, hardmask composition comprising monomer, and pattern forming method using hardmask composition

A monomer for a hardmask composition, a hardmask composition, and a method of forming patterns, the monomer being represented by the following Chemical Formula 1: 

Monomer for hardmask composition, hardmask composition including the monomer, and method of forming patterns using the hardmask composition

A hardmask composition includes a monomer represented by the following Chemical Formula 1, a polymer including a moiety represented by the following Chemical Formula 2, a polymer including a moiety represented by the following Chemical Formula 3, or a combination thereof, and a solvent, 

Hardmask composition, method of forming patterns using the hardmask composition and semiconductor integrated circuit device including the patterns

A hardmask composition and a method of forming patterns, the composition including a solvent; and a polymer including a moiety represented by the following Chemical Formula 1, 

A hardmask composition includes a polymer including a moiety represented by the following Chemical Formula 1 and a solvent. In the above Chemical Formula 1, A and B are as defined in the specification.

A composition for a hardmask including copolymer including repeating units represented by Chemical Formulae 1 and 2 and a solvent, a method of forming a pattern using the same, and a semiconductor integrated circuit device including a pattern formed using the method are provided.

Composition for hardmask, method of forming patterns using the same, and semiconductor integrated circuit device including the patterns

A hardmask composition includes a monomer represented by the following Chemical Formula 1 and an aromatic ring-containing polymer, 

Hardmask composition and method of forming patterns and semiconductor integrated circuit device including the patterns

Forming a dual damascene structure includes forming a first insulation layer and a second insulation layer, forming a resist mask, forming a via hole down to a lower end of the first insulation layer, forming a hardmask layer in the via hole and on the second insulation layer using a spin-coating method, forming a resist mask, forming a first trench hole down to a lower end of the second insulation layer, respectively removing a part of the hardmask layer in the via hole and a part of the hardmask layer on the second insulation layer, forming a second trench hole by removing a part of the first insulation layer between a top corner of the hardmask layer remaining in the via hole and a bottom corner of the first trench hole, removing the hardmask layer, and filling the via hole and the second trench hole with a conductive material.

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Suwon-si, South Korea

Joon-Young Moon