Samsung Electronics Co., Ltd.

Joon Young Kwak

Kitae Park

Jin-Yub Lee

Jinman Han

Sangyong Yoon

Yoon-Hee Choi

Bo-Geun Kim

You-Sang Lee

Jin-kook Kim

A nonvolatile memory includes a plurality of N-bit multi-level cell (MLC) memory cells and a controller. The plurality of N-bit MLC memory cells are for storing N pages of data, each of the MLC memory cells programmable into any one of 2threshold voltage distributions, where N is a positive number. The controller is configured to program the N pages of data into the MLC memory cells, and to execute a partial interleave process in which the N pages of data are divided into M page groups, where M is a positive number and where each page group includes at least one of the N pages of data, and in which each of the M page groups is applied to an error correction code (ECC) circuit to generate parity bits for the respective M page groups, where a bit-error rate (BER) among the pages within each of the M groups is equalized by the partial interleave process.

Nonvolatile memory device and system, and method of programming a nonvolatile memory device

A voltage generator is provided. The voltage generator includes a voltage pump and a voltage controller. The voltage pump generates a target voltage using a clock signal. The voltage controller compares a temporary voltage input from the voltage pump with a reference voltage to generate a control signal controlling the voltage pump. The voltage controller includes a string of a plurality of resistors connected in series to change a level of the temporary voltage to a voltage level of a corresponding comparison voltage. When the plurality of resistors are in a string, a resistance of a resistor closest to one end of the string is greater than resistances of other resistors of the string. The voltage controller may further include a jumping unit controlling connection or disconnection of two arbitrary nodes among first to n-th nodes (where n is a natural number) defined as connection points of the adjacent resistors of the string. Accordingly, the voltage generator can generate a voltage of with a more accurate level.

High voltage generator in semiconductor memory

A nonvolatile memory device including a memory cell; a word line coupled to the memory cell; a drive line; a switch coupled between the word line and the drive line, and configured to electrically connect the word line and the drive line; and a voltage generator coupled to the drive line and configured to charge the drive line to a precharge voltage. The precharge voltage is higher than a bias voltage applied to the word line during a corresponding operation on the memory cell.

Non-volatile memory device, computing system and wordline driving method

A reference voltage generating circuit provides a stabilized reference voltage and includes; a clock generator providing a clock signal, a high voltage generator providing a pumping voltage in response to the clock signal, a ripple eradicator providing a static voltage by removing voltage ripple from the pumping voltage, and a reference voltage generator providing the reference voltage.

Growing community of inventors

Seongnam-si, South Korea

Joon Young Kwak