Samsung Display Co., Ltd.

Dongwoo Fine-chem Co., Ltd.

Samsung Electronics Co., Ltd.

Joon-Woo Lee

Young-Chul Park

Sang-Hoon Jang

Young-Jun Jin

Sang-tae Kim

In-Ho Yu

Suck-Jun Lee

Min-Ki Lim

Hong-Sick Park

O-Byoung Kwon

Young-Jin Yoon

Jong-Hyun Choung

Seon-Il Kim

Yu-Jin Lee

Byeong-Jin Lee

Kyong-Min Kang

Dong-Ki Kim

Seung-Jae Yang

Wang Woo Lee

Shin-Il Choi

Ji-Young Park

In-Bae Kim

Wang-Woo Lee

Jae-Woo Jeong

In Seol Kuk

Hye-Ra Shin

Keyong Bo Shim

Sang-Gab Kim

Sang Gab Kim

Bong-Kyun Kim

Seung-Yong Lee

Dong-Uk Choi

Sun-Young Hong

Seung-yong Lee

Yong-suk Choi

Young-Joo Choi

Hyun-Kyu Lee

Jae-Yeon Lee

Hong-Sik Park

Nam-Seok Suh

Kyu-sang Kim

Hong-Je Cho

Kwan-Tack Lim

Jin-Su Kim

Ky-Sub Kim

Seung-Hwan Chon

A etchant composition that includes, based on a total weight of the etchant composition, about 0.5 wt % to about 20 wt % of a persulfate, about 0.5 wt % to about 0.9 wt % of an ammonium fluoride, about 1 wt % to about 10 wt % of an inorganic acid, about 0.5 wt % to about 5 wt % of a cyclic amine compound, about 0.1 wt % to about 10.0 wt % of a sulfonic acid, about 5 wt % to about 10 wt % of an organic acid or a salt thereof, and a remainder of water. The etchant composition may be configured to etch a metal layer including copper and titanium, to form a metal wire that may be included in a thin film transistor array panel of a display device.

Etchant composition and method of forming metal wire and thin film transistor array panel using the same

An etchant includes: 5 to 20 wt % of persulfate, 1 to 10 wt % of at least one compound of an inorganic acid, an inorganic acid salt, or a mixture thereof, 0.3 to 5 wt % of a cyclic amine compound, 1 to 10 wt % of at least one compound of an organic acid, an organic acid salt, or a mixture thereof, 0.1 to 5 wt % of p-toluenesulfonic acid, and water, based on the total weight of the etchant. A copper-titanium etchant further includes 0.01 to 2 wt % of a fluoride-containing compound. A method of forming a display device using the etchant, and a display device, are also disclosed.

Etchant, display device and method for manufacturing display device using the same

Exemplary embodiments of the present invention disclose a non-halogenated etchant for etching an indium oxide layer and a method of manufacturing a display substrate using the non-halogenated etchant, the non-halogenated etchant including nitric acid, sulfuric acid, a corrosion inhibitor including ammonium, a cyclic amine-based compound, and water.

Non-halogenated etchant and method of manufacturing a display substrate using the non-halogenated etchant

An etchant composition for etching a transparent electrode is provided, the etchant composition includes an inorganic acid, an ammonium (NH)-containing compound, a cyclic amine compound, and the remaining amount of water.

Method of etching a pixel electrode

Etching composition for etching a transparent electrode

An etchant according to exemplary embodiments of the present invention includes about 0.5 wt % to about 20 wt % of persulfate, about 0.01 wt % to about 2 wt % of a fluorine compound, about 1 wt % to about 10 wt % of inorganic acid, about 0.5 wt % to about 5 wt % of a cyclic amine compound, about 0.1 wt % to about 5 wt % of a chlorine compound, about 0.05 wt % to about 3 wt % of copper salt, about 0.1 wt % to about 10 wt % of organic acid or organic acid salt, and water.

Echtant and method for manufacturing display device using the same

An etchant composition is provided. The etchant composition includes about 40 to about 65 wt % of phosphoric acid, about 2 to about 5 wt % of nitric acid, about 2 to about 20 wt % of acetic acid, about 0.1 to about 2 wt % of a compound containing phosphate, about 0.1 to about 2 wt % of a compound simultaneously containing an amino group and a carboxyl group, and a remaining weight percent of water for the total weight of the composition.

Etchant composition, and method of fabricating metal pattern and thin film transistor array panel using the same

An etchant for removing an indium oxide layer includes sulfuric acid as a main oxidizer, an auxiliary oxidizer such as HPO, HNO, CHCOOH, HClO, HO, and a Compound A that is obtained by mixing potassium peroxymonosulfate (2KHSO), potassium bisulfate (KHSO), and potassium sulfate (KSO) together in the ratio of 5:3:2, an etching inhibitor comprising an ammonium-based material, and water. The etchant may remove desired portions of the indium oxide layer without damage to a photoresist pattern or layers underlying the indium oxide layer.

Etchant composition for indium oxide layer and etching method using the same

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Jeonju-si, South Korea

Joon-Woo Lee