Skhynix Inc.

Hyundai Motor Company

Kia Motors Corporation

Joon-Woo Kim

Hong-Sik Kim

Hyun-Seok Kim

Hyung-Dong Lee

Young-Suk Moon

Yong-Kee Kwon

Hyung-Gyun Yang

Young-Jae Jin

Sang-Joon Park

Jung-Jae Han

A memory module may include a first memory module comprising a plurality of first memory devices each having an extra memory region, a second memory module comprising a plurality of second memory devices each having an extra memory region, and a control logic suitable for writing/reading data to/from the first memory devices, wherein the control logic writes/reads target data to be transferred to/from a third memory device having an error among the first memory devices, to/from the extra memory regions of the second memory devices.

Memory module, memory system including the same and operation method thereof

A coolant thermoelectric generation system may include a thermoelectric moduleconnected to a high temperature linethrough which engine coolant flows and a low temperature linethrough which coolant having a temperature lower than a temperature of the engine coolant flows, and configured to perform thermoelectric generation with a heat exchange effect based on a coolant temperature difference between the engine coolant and the coolant having a temperature lower than a temperature of the engine coolant with a thermoelectric elementinterposed therebetween; a heat exchange line, in which the heat exchange effect occurs, and a bypass line, in which no heat exchange effect occurs, the heat exchange line and the bypass line connected to the high temperature line to form two paths, respectively; and built-in valves--located in the internal space of the thermoelectric module, and configured to adjust flow rates of the coolant in the heat exchange line and the bypass line.

Circuit integrated type coolant thermoelectric generation system and coolant control thermoelectric generation method

A memory system includes a memory module comprising a plurality of memory devices, and a memory controller suitable for controlling the plurality of memory devices to perform a refresh operation or performing an error correction code (ECC) operation on the plurality of memory devices, according to a refresh operation request.

Memory controller for controlling refresh operation and memory system including the same

A semiconductor device may include a storage unit configured to store a number of times a first command has been provided to a memory cell array, a control unit configured to generate a second command operable to activate at least one word line in the memory cell array based on a comparison of the number stored at the storage unit with a threshold value, when the first command is received, and a selection unit configured to select one of the first command and the second command based on a result of the comparison and transmit the selected command to the memory cell array.

Semiconductor device controlling refresh operation for preventing wordline disturbance

A semiconductor device may include a first encoding unit configured to encode first data into an anti-drift code, and a second encoding unit configured to add parity information to the anti-drift code.

Encoder, decoder and semiconductor device including the same

Provided is a semiconductor device configured to encode input data into a codeword including M different symbols, each of which includes Nsymbols. The semiconductor device including a first storage unit configured to store a first state value which is reset according to M and N; a second storage unit corresponding to any one of the M different symbols and configured to store M second state values determined through the corresponding symbol and the first state value; a third storage unit configured to store a third state value.

A semiconductor device includes a controller configured to receive a request for a first memory device, determine whether or not a multi-bit error has occurred at a requested address of the first memory device, and process the request on a second memory device instead of the first memory device, when the multi-bit error has occurred.

Growing community of inventors

Seoul, South Korea

Joon-Woo Kim