Sungkyunkwan University

University-Industry Cooperation Group of Kyung Hee University

Joon Sung Yang

Ik Joon Chang

Sun Kook Kim

Seung Yeob Lee

Imran Muhammad

Tae Hyun Kwon

Jung Min You

A memory device having an error correction function includes: a memory element including multiple memory cells, a reconfiguration logic unit configured to group input data according to data retention properties of each memory cell in which each of the input data will be stored or group storage data stored in the memory element according to data retention properties of each memory cell in which each of the storage data is stored and arrange each of the input data or each of the storage data grouped by identical retention properties to be adjacent to each other, an error correction encoder configured to apply an error correction encoding algorithm with a different intensity to the grouped input data in each group, and an error correction decoder configured to apply an error correction decoding algorithm corresponding to an intensity applied by the error correction encoder to the grouped storage data in each group.

Memory device having error correction function and error correction method for memory device

The present invention relates to memory apparatuses and an operating methods using a heterogeneous memory array. An operation method of a memory apparatus using a heterogeneous memory array according to an embodiment of the present invention includes dividing an input bit into at least one data bit according to a mode bit, and writing the divided data bits in each cell of the memory array by using a cell level of the memory array which is configured according to the mode bit.

Memory apparatus and methods with heterogeneous memory array architecture

The present invention discloses a chaos nanonet device including a nanonet material having metallic and semiconductive properties dispersed on a substrate and an electrode array composed of a plurality of electrodes that has a selected domain size on the nanonet material, and a PUF security apparatus based on the chaos nanonet device.

Chaos nanonet device, and chaos nanonet-based PUF security apparatus

Growing community of inventors

Suwon-si, South Korea

Joon Sung Yang