Samsung Electronics Co., Ltd.

Joon Sung Ryu

Ki Yong Song

Yi Yeol Lyu

Jin Heong Yim

Jong Kug Seon

Sang Yoon Lee

Young Hun Byun

Euk Che Hwang

Hyun Jun Jeong

Hae Jung Son

A composition of (i) an organometallic precursor containing a hydrazine compound coordinating with a central metal thereof and (ii) an organometallic compound of a main group metal and a method of forming metal film or pattern using this composition.

Organometallic precursor composition and method of forming metal film or pattern using the same

A siloxane-based resin having a novel structure and a semiconductor interlayer insulating film using the same. The siloxane-based resins have a low dielectric constant in addition to excellent mechanical properties and are useful materials in an insulating film between interconnect layers of a semiconductor device.

Siloxane-based resin and a semiconductor interlayer insulating film using the same

A siloxane-based resin having a novel structure and a semiconductor interlayer insulating film using the same. The siloxane-based resins have a low dielectric constant in addition to excellent mechanical properties and are useful materials in an insulating film between interconnecting layers of a semiconductor device.

Siloxane-based resin and interlayer insulating film formed using the same

Disclosed herein are a siloxane-based resin having novel structure and an interlayer insulating film for a semiconductor device formed using the same The siloxane-based resins have so low dielectric constant in addition to excellent mechanical properties, heat-stability and crack-resistance that they are useful materials for an insulating film between interconnect layers of a semiconductor device.

Growing community of inventors

Incheon-si, South Korea

Joon Sung Ryu