Samsung Electronics Co., Ltd.

Yonsei University

Samsung Electro-mechanics Co., Ltd.

Joon-Sung Lee

Dong-hyun Kim

Min-oh Kim

Yoon-ho Nam

Eun-hae Joe

Seung-Keun Lee

Jae-Hoon Choi

Na-rae Choi

Yun-Heub Song

Chan-Jo Lee

Seok-Hwan Ahn

Woon-kyung Lee

Yong-Sam Lee

Seung-Nam Kim

Seong Eon Park

Jung-Sub Shin

Hyun Ik Joe

Sung-Keun Cho

Hyeon Cheol Jin

A lift pin module includes a lift pin which includes a head portion disposed at a first end of the lift pin, and a connecting portion disposed at a second end of the lift pin opposite to the first end, the head portion connected to a stage disposed inside a semiconductor process chamber, and the head portion extending in a first direction; an upper weight which includes a side surface with an opening extending in the first direction, the opening configured to receive the lift pin therein, and the upper weight surrounding the connecting portion of the lift pin; and a lower weight screwed to the upper weight, the lower weight disposed below the upper weight.

Lift pin module

Disclosed is an embedded board and a method of manufacturing the same. The embedded board may include an insulating layer a first circuit layer formed inside the insulating layer a second circuit layer formed on an upper part of the first circuit layer, and the second circuit layer being disposed inside the insulating layer, a first electronic element arranged inside the insulating layer, the first electronic element being spaced apart from the second circuit layer, a metal pillar formed between the first circuit layer and the second circuit layer or the first electronic element, and a first via formed on the upper part of the second circuit layer inside the insulating layer.

Embedded board and method of manufacturing the same

A method of removing distortion by lipids from an MR image includes obtaining an MR image including voxels, obtaining data of the voxels from the obtained MR image, estimating a lipid-related spectrum by using the obtained data, and removing the estimated lipid-related spectrum from the obtained data.

Method and apparatus for removing distortion by lipids from magnetic resonance image

A method obtains main magnetic field information and radio frequency (RF) pulse related information in a magnetic resonance imaging (MRI) system, in which a pulse having a first flip angle and a pulse having a second flip angle are transmitted to a target object at predetermined time intervals. The method includes: obtaining at least one first response signal with respect to the pulse, having the first flip angle, from the target object; obtaining at least one second response signal, with respect to the pulse having the second flip angle, from the target object; and combining the at least one first response signal and the at least one second response signal to obtain the main magnetic field information and the RF pulse related information.

Method and apparatus for obtaining main magnetic field information and radio pulse related information in a magnetic resonance imaging system with different flip angles

A method obtains a magnetic resonance (MR) spectrum of a voxel in a magnetic resonance (MR) image obtained from a magnetic resonance imaging (MRI) apparatus. The method includes configuring a sampling pattern of k-space data; sampling predetermined data from the k-space data based on the configured sampling pattern; and obtaining the MR spectrum of the voxel by using the sampled data.

Method and apparatus for obtaining a magnetic resonance spectrum of a voxel in a magnetic resonance image

The present invention provides a nonvolatile memory device having high reliability with novel sidewall spacer structures. The gate stack structure for use in a nonvolatile memory device comprises a semiconductor substrate, a gate stack formed on the semiconductor substrate. The gate stack has a sidewall and a top surface. A multi-layer sidewall spacer structure is formed on the sidewall of the gate stack. The multi-layer sidewall spacer structure includes a first oxide layer, a first nitride layer, a second oxide layer, and a second nitride layer that are sequentially stacked. With the present invention, even if the second nitride layer is perforated or damaged during the formation of contact holes, sidewalls of the gate stack of nonvolatile memory cell can be protected with the first nitride layer from mobile ions. Also, etching damage to source/drain regions or field regions can be reduced.

Nonvolatile semiconductor memory device with a multi-layer sidewall spacer structure and method for manufacturing the same

A method for managing memory cells in a nonvolatile memory, such as a flash memory, includes detecting and intermediately programming fast-erased memory cells. All of the memory cells in a sector can then be erased.

Method for erasing memory cells in a nonvolatile memory

Growing community of inventors

Seoul, South Korea

Joon-Sung Lee