Samsung Electronics Co., Ltd.

Yonsei University

Joon-Sung Kim

Young-Soo Kim

Jong-Hyeuk Lee

Seung-Hee Han

Hye-Soo Shin

Ji-Yong You

Hong-Yeop Song

Dae-son Kim

Seul-Ki Bae

Mi-Youn Kim

A method of fabricating a semiconductor device may include: alternatively stacking dielectric layers and conductive layers on a substrate to form a stack structure, forming a first photoresist pattern on the stack structure, forming a second photoresist pattern whose thickness is reduced as the second photoresist pattern extends from the center of the stack structure towards a periphery of the stacked structure by performing a heat treatment on the first photoresist pattern, etching the stack structure through the second photoresist pattern to form a slope profile on the stack structure whose thickness is reduced as the slope profile extends from the center of the stack structure towards a periphery of the stacked structure, and forming a step-type profile on the end part of the stack structure by selectively etching the dielectric layer.

Method of manufacturing semiconductor device

A method and apparatus for parallel structured Latin square interleaving in a communication system are provided. The method includes dividing input information bits into sub-blocks according to a parallel processing order, generating a first Latin square matrix or a second Latin square matrix by comparing the parallel processing order with a predetermined threshold, and interleaving by reading out the information bits divided into the sub-blocks according to the generated Latin square matrix.

Method and apparatus for parallel structured Latin square interleaving in communication system

The alignment marks formed in a scribe line of a semiconductor substrate include at least one main mark, a first sub-mark and second sub-marks. The first sub-mark is formed at a central portion of the main mark. The second sub-marks are disposed symmetrically with respect to the first sub-mark and are used for detecting asymmetry of the main mark by measuring distances between respective side edges of the main mark and the first sub-mark, and by measuring respective side edges between the main mark and each of the second sub-marks. Alternatively, the alignment marks include main outer and inner marks and a sub-mark disposed in between the main outer and inner marks. In this case, the sub-mark is used for detecting asymmetry of the main mark by measuring distances between respective side edges of the main outer mark and the sub-mark, and by measuring respective side edges between the main inner mark and the sub-mark. Thus, accurate alignment information can be obtained regardless of whether the main mark was inadvertently formed as asymmetrical.

Substrate having alignment marks and method of obtaining alignment information using the same

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Seoul, South Korea

Joon-Sung Kim