Samsung Electronics Co., Ltd.

Joon-Suk Oh

Hye-Young Park

Dae-Shik Kim

Yong-chan Kim

Yong-Chan Kim

Oh-Kyum Kwon

Oh-kyum Kwon

Myung-hee Kim

Jung-Soo Nam

Myung-Hee Kim

A semiconductor device includes a substrate including an active region having an isolated shape and a field region. A gate insulation layer is provided on an upper surface of the active region of the substrate. A gate electrode is provided on the gate insulation layer and spaced apart from the boundary of the active region to cover the middle portion of the active region. An impurity region is provided under a surface of the active region that is exposed by the gate electrode.

Semiconductor device and method of manufacturing the semiconductor device

A schottky diode may include a schottky junction including a well formed in a semiconductor substrate and a first electrode contacting the first well. The well may have a first conductivity type. A first ohmic junction may include a first junction region formed in the well and a second electrode contacting the first junction region. The first junction region may have a higher concentration of the first conductivity type than the well. A first device isolation region may be formed in the semiconductor substrate separating the schottky junction and the first ohmic junction. A well guard having a second conductivity type opposite to the first conductivity type may be formed in the well. At least a portion of the well guard may be formed under a portion of the schottky junction.

Schottky diode and method of fabricating the same

Some embodiments of the present invention provide high voltage transistors including a semiconductor substrate and a device isolation film defining an active region in the semiconductor substrate. A gate electrode extends along a central portion of the active region while maintaining a predetermined width on the semiconductor substrate. A second well is formed on both sides of the gate electrode in the semiconductor substrate, and partially extends to a bottom surface of the device isolation film. The active region in the semiconductor substrate comprises a first active region disposed under the gate electrode, and separating the device isolation film and a second active region defined by the first active region and the device isolation film. Methods of manufacturing high voltage transistors are also provided.

High voltage transistors

Growing community of inventors

Seoul, South Korea

Joon-Suk Oh