Electronics and Telecommunications Research Institute

Joon Suk Lee

Byoung Gon Yu

Young Sam Park

Sung Min Yoon

Seung Yun Lee

Soon Won Jung

A nonvolatile programmable switch device using a phase-change memory device and a method of manufacturing the same are provided. The switch device includes a substrate, a first metal electrode layer disposed on the substrate and including a plurality of terminals, a phase-change material layer disposed on the substrate and having a self-heating channel structure, the phase-change material layer having a plurality of introduction regions electrically contacting the terminals of the first metal electrode layer and a channel region interposed between the introduction regions, an insulating layer disposed on the first metal electrode layer and the phase-change material layer, a via hole disposed on the first metal electrode layer, and a second metal electrode layer disposed to fill the via hole. The switch device performs memory operations using resistive heating of a phase-change material without an additional heater electrode, thereby minimizing thermal loss due to thermal conductivity of a metal electrode to reduce power consumption of the switch device.

Nonvolatile programmable switch device using phase-change memory device and method of manufacturing the same

A phase-change memory device in which a phase-change material layer has a multilayered structure with different compositions and a method of fabricating the same are provided. The phase-change memory device includes a first electrode layer formed on a substrate, a heater electrode layer formed on the first electrode layer, an insulating layer formed on the heater electrode layer and having a pore partially exposing the heater electrode layer, a phase-change material layer formed to fill the pore and partially contacting the heater electrode layer, and a second electrode layer formed on the phase-change material layer. The main operating region functioning as a memory operating region is formed of a GeSbTephase-change material to ensure the stability of a memory operation, and simultaneously, the subsidiary regions formed of a GeSbTephase-change material are disposed respectively on and under the GeSbTemain operating region to prevent leakage of thermal energy through an electrode, thereby reducing power consumption.

Growing community of inventors

Bucheon-si, South Korea

Joon Suk Lee