Samsung Electronics Co., Ltd.

Joon-soo Park

Chang-Min Park

Han-Ku Cho

Jung-hyeon Lee

Dong-ha Kim

Multi-exposure lithography systems are provided for improved overlay accuracy. In one aspect, a method for multi-exposure lithography operates by determining overlay parameters corresponding to each of a plurality of sub-layouts, inputting the overlay parameters into an exposure system, exposing each sub-layout to photoresist on a wafer by using the exposure system, wherein prior to the exposure process for a given sub-layout, a correction process is performed for the sub-layout using a corresponding overlay parameter to correct an overlay of the sub-layout, and developing the exposed photoresist after exposing all of the sub-layouts.

Multi-exposure lithography system providing increased overlay accuracy

Methods for manufacturing semiconductor devices with contact bodies extended in a direction of a bit line to increase the contact area between a contact body and a storage electrode is provided. In one aspect a method includes forming gate lines on a semiconductor substrate, forming a first insulating layer to cover the gate lines, forming first contact pads and second contact pads, which are electrically connected to the semiconductor substrate between the gate lines, by penetrating the first insulating layer. Further, a second insulating layer is formed to cover the first contact pads and the second contact pads, and bit lines are formed across over the gate lines and are electrically connected to the second contact pads by penetrating the second insulating layer. In addition, a third insulating layer is formed to cover the bit lines and is selectively etched to form a band-type opening that crosses the bit lines and exposes the first contact pads.

Method for manufacturing semiconductor device with contact body extended in direction of bit line

Multi-exposure lithography methods and systems that provide improved overlay accuracy. In one aspect of the invention, a method for multi-exposure lithography comprises determining overlay parameters corresponding to each of a plurality of sub-layouts, inputting the overlay parameters into an exposure system, exposing each sub-layout to photoresist on a wafer by using the exposure system, wherein prior to the exposure process for a given sub-layout, a correction process is performed for the sub-layout using a corresponding overlay parameter to correct an overlay of the sub-layout, and developing the exposed photoresist after exposing all of the sub-layouts.

Multi-exposure lithography method and system providing increased overlay accuracy

A lens unit, for a projector, includes a scrambler which converts light input from a lamp into a uniform light. An image lens unit is arranged on an optical path between the scrambler and a liquid crystal display (LCD) panel for generating an image. The image lens unit allows the light passing through the scrambler to be emitted to the entire surface of the LCD panel. A collimating lens is arranged on the optical path between the image lens and the LCD panel and is provided for converting the light passing through the image lens into a parallel beam. The image lens unit consists of a first image lens of a positive power and a second image lens of a positive power.

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Gwacheon, South Korea

Joon-soo Park