Samsung Electronics Co., Ltd.

Joon-Soo Kwon

Sang-Soo Park

Sang-Won Hwang

Seung-Cheol Han

A non-volatile memory device includes a memory cell array to which an arithmetic internal data is written; and an arithmetic circuitry configured to receive an arithmetic input data and the arithmetic internal data for an arithmetic operation of a neural network with the arithmetic internal data and the arithmetic input data in response to an arithmetic command, perform the arithmetic operation using the arithmetic internal data and the arithmetic input data to generate an arithmetic result data, and output the arithmetic result data of the arithmetic operation of the neural network.

Non-volatile memory device including arithmetic circuitry for neural network processing and neural network system including the same

In a method of operating a storage device including at least one nonvolatile memory device and a memory controller configured to control the at least one nonvolatile memory device, a boundary page of a first memory block among a plurality of memory blocks included in the at least one nonvolatile memory device is searched for, at least one clean page, in which data is not written, of the first memory block is searched for, a dummy program operation is performed on a portion of the boundary page and the at least one clean page, and an erase operation is performed on the first memory block.

Methods of operating storage devices

A method of programming a memory device includes programming a low bit to a memory cell included in a word line and a bit line based on a first verification condition, the low bit belonging to a group of bits including a high bit. The first verification condition is based on at least one of a first bit line current, a first develop time for verifying the programming of the low bit, and a first word line voltage. The method includes programming the high bit to the memory cell based on a second verification condition. The second verification condition is based on at least one of a second bit line current, a second develop time for verifying the programming of the high bit, and a second word line voltage.

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Seoul, South Korea

Joon-Soo Kwon