Skhynix Inc.

Joon-Seop Sim

Jae-Yun Yi

Seok-Pyo Song

Dong-Joon Kim

Alvin Oliver Glova

An electronic device including a semiconductor memory is provided to include a mat region comprising a plurality of memory cells, each including a second transistor; a first switching region located at a side of the mat region and including first transistors; and a second switching region located at the other side of the mat region and including third transistors, wherein the second transistors comprise: a plurality of second active regions; and a plurality of second gate structures extending in the first direction to cross the second active regions, wherein each second active regions is divided into a first side portion, a middle portion and a second side portion that are arranged alternately and repeatedly in the first direction, wherein the first transistors and the third transistors include their active regions and gate structures which are arranged in the same manner as those of the second transistors.

Electronic device including switching element and semiconductor memory

Provided is an electronic device including a semiconductor memory. The semiconductor memory may include: a first portion of a variable resistance element, the first portion having an island shape and including at least a free layer which has a variable magnetization direction; a second portion of the variable resistance element, the second portion having a line shape which extends in a direction over the first portion and including at least a pinned layer which has a pinned magnetization direction; and a tunnel barrier layer interposed between the free layer and the pinned layer.

Electronic device and method for fabricating the same

An electronic device includes a semiconductor device that includes: a substrate including a switching element having a buried gate electrode; a buried decoupling capacitor having a line width same as a line width of the buried gate electrode; and a variable resistance element, electrically coupled to the switching element, formed over the substrate.

Provided is an electronic device including a semiconductor memory which includes a first region in which a first variable resistance element for storing data is disposed; and a second region in which a reference resistance element for sensing data stored in the first variable resistance element is disposed, and wherein the reference resistance element comprising: a plurality of second variable resistance elements formed of the same material at the same level as the first variable resistance element; a plurality of contacts coupled to each of the second variable resistance elements; and a first pad coupled to part of the contacts which are coupled to one of two adjacent second variable resistance elements and part of the contacts which are coupled to the other of the two adjacent second variable resistance elements for coupling the two adjacent second variable resistance elements with each other.

Provided is an electronic device including a semiconductor memory which includes a cell array region having a first variable resistance element and a peripheral circuit region having a decoupling capacitor, the decoupling capacitor including a bottom electrode, a dielectric layer pattern, and a top electrode. The cell array region may include: a first gate; a first contact over the first gate; a second contact over an active region at one side of the first gate; and the first variable resistance element over the second contact, and the peripheral circuit region may include: a second gate formed of the same material at the same level as the first gate; the bottom electrode disposed over the second gate and formed at the same level as the first contact; and the dielectric layer pattern and the top electrode disposed over the bottom electrode.

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Icheon-si, South Korea

Joon-Seop Sim