Samsung Electronics Co., Ltd.

Samsung Electro-mechanics Co., Ltd.

Gwangju Institute of Science and Technology

Samsung Led Co., Ltd.

Joon-seop Kwak

Jae-Hee Cho

Su-hee Chae

June-o Song

Tae-yeon Seong

Jae-hee Cho

Kyo-yeol Lee

Kyoung-ho Ha

Youn-joon Sung

Dong-seok Leem

Woong-ki Hong

Mi-yang Kim

Hyun-Soo Kim

Won-Seok Lee

Jeong-wook Lee

Tan Sakong

Ho-sun Paek

Kwang-ki Choi

Ok-hyun Nam

Sung-nam Lee

Won-kyoung Choi

Jong-wan Kim

Jaehee Cho

Yoon-joon Sung

A light emitting diode and a method for fabricating the same are provided. The light emitting diode includes: a transparent substrate; a semiconductor material layer formed on the top surface of a substrate with an active layer generating light; and a fluorescent layer formed on the back surface of the substrate with controlled varied thicknesses. The ratio of light whose wavelength is shifted while propagating through the fluorescent layer and the original light generated in the active layer can be controlled by adjusting the thickness of the fluorescent layer, to emit desirable homogeneous white light from the light emitting diode.

Light emitting diode and method for fabricating the same

Provided is a light emitting device and a method of manufacturing the same. The light emitting device comprises a transparent substrate, an n-type compound semiconductor layer formed on the transparent substrate, an active layer, a p-type compound semiconductor layer, and a p-type electrode sequentially formed on a first region of the n-type compound semiconductor layer, and an n-type electrode formed on a second region separated from the first region of the n-type compound semiconductor layer, wherein the p-type electrode comprises first and second electrodes, each electrode having different resistance and reflectance.

Light emitting device and method of manufacturing the same

A GaN based III-V nitride semiconductor light-emitting device and a method for fabricating the same are provided. In the GaN based III-V nitride semiconductor light-emitting device including first and second electrodes arranged facing opposite directions or the same direction with a high-resistant substrate therebetween and material layers for light emission or lasing, the second electrode directly contacts a region of the outmost material layer exposed through an etched region of the high-resistant substrate. A thermal conductive layer may be formed on the bottom of the high-resistant substrate to cover the exposed region of the outmost material layer.

Method for manufacturing of light emitting device using GaN series III-V group nitride semiconductor material

Provided are a reflective electrode and a compound semiconductor light emitting device having the reflective electrode, such as LED or LD is provided. The reflective electrode formed on a p-type compound semiconductor layer of a compound semiconductor light emitting device, comprising a first electrode layer formed one of a Ag and Ag-alloy and forms an ohmic contact with the p-type compound semiconductor layer, a third electrode layer formed of a material selected from the group consisting of Ni, Ni-alloy, Zn, Zn-alloy, Cu, Cu-alloy, Ru, Ir, and Rh on the first electrode layer, and a fourth electrode layer formed of a light reflective material on the third electrode layer.

Reflective electrode and compound semiconductor light emitting device including the same

A low resistance electrode and a compound semiconductor light emitting device including the same are provided. The low resistance electrode deposited on a p-type semiconductor layer of a compound semiconductor light emitting device including an n-type semiconductor layer, an active layer, and the p-type semiconductor layer, including: a reflective electrode which is disposed on the p-type semiconductor layer and reflects light being emitted from the active layer; and an agglomeration preventing electrode which is disposed on the reflective electrode layer in order to prevent an agglomeration of the reflective electrode layer during an annealing process.

Low resistance electrode and compound semiconductor light emitting device including the same

A semiconductor laser device having a smooth cleavage plane is provided. The provided laser device includes a current injection ridge and force distribution ridges formed adjacent to the current injection ridge, which protrudes from an upper surface of a mesa structure. The mesa structure is formed of multi-semiconductor material layers including a laser resonance layer and cladding layers disposed above and below the resonance layer. The current injection ridge and the force distribution ridges distribute a scribing force when cleaving the laser device so that the smooth cleavage planes are obtained. Defects are prevented in the current injection ridge due to the distribution of force when bonding flip chips.

Semiconductor laser device with a rounded base mesa structure

Provided are a semiconductor laser diode having a current confining layer and a method of fabricating the same. The semiconductor laser diode includes a substrate, a first material layer deposited on the substrate, an active layer which is deposited on the first material layer and emits a laser beam, and a second material layer which is deposited on the active layer and includes a ridge portion protruding from the active layer and a current confining layer formed by injection of ions into peripheral portions of the ridge portion so as to confine a current injected into the active layer. Therefore, it is possible to fabricate an improved semiconductor laser diode having a low-resonance critical current value that can remove a loss in an optical profile and reduce the profile width of a current injected into the active layer while maintaining the width of the ridge portion.

Semiconductor laser diode with current restricting layer and fabrication method thereof

Provided are a top-emitting N-based light emitting device and a method of manufacturing the same. The device includes a substrate, an n-type clad layer, an active layer, a p-type clad layer, and a multi ohmic contact layer, which are sequentially stacked. The multi ohmic contact layer includes one or more stacked structures, each including a modified metal layer and a transparent conductive thin film layer, which are repetitively stacked on the p-type clad layer. The modified metal layer is formed of an Ag-based material.

Top-emitting nitride-based light emitting device and method of manufacturing the same

GaN based group III-V nitride semiconductor light-emitting diode and method for fabricating the same

A multi-layer electrode and a compound semiconductor light emitting device comprising the same. A multi-layer electrode for the compound semiconductor light emitting device may be formed on a p-type compound semiconductor layer of the compound semiconductor light emitting device and may include: a first electrode layer formed on the p-type compound semiconductor layer which comprises a substance selected from the group consisting of a transparent conductive oxide, a non-conductive oxide, and a nitride; and a second electrode layer formed on the first electrode layer which comprises a substance selected from the group consisting of a transparent conductive oxide, a non-conductive oxide, and a nitride.

Multi-layer electrode and compound semiconductor light emitting device comprising the same

A semiconductor light emitting diode having a textured structure and a method of manufacturing the semiconductor light emitting diode are provided. The method includes forming a first semiconductor layer on a substrate; forming a textured structured first semiconductor layer by penetrating a material of a material layer into the first semiconductor layer after the material layer is formed on the first semiconductor layer and is annealed; and forming a second semiconductor layer on the first semiconductor layer.

Growing community of inventors

Gyeonggi-do, South Korea

Joon-seop Kwak