Hyundai Motor Company

Kia Corporation

Korea Advanced Institute of Science and Technology

Korea Institute of Science and Technology

Pohang University of Science and Technology Foundation

Joon-Hyun Kwon

Su-Jung Noh

Han-Saem Lee

Ji-Sung Lee

Byong-Guk Park

Jaimin Kang

Soogil Lee

Sang-Hyeok Yang

Hyun-Soo Kim

Byoung-Chul Min

Jin-Pyo Hong

Dong-Soo Han

Jeong-Hun Shin

Hyun-Sang Hwang

Woo-Seok Choi

Kyu-Min Lee

Jeong-Mok Kim

Dae-Kyu Koh

Jong-Bum Choi

Jeong-Woo Seo

An embodiment spin-orbit torque device array includes a plurality of single devices, each device including a non-magnetic layer, a magnetic layer bonded to the non-magnetic layer, and an upper layer bonded to the magnetic layer, wherein the upper layer includes oxide, and wherein a magnetization state of each of the single devices has only two states, the two states being an up state and a down state.

Spin-orbit torque device array and method of manufacturing spin-orbit torque device array

A spin-orbit-torque (SOT)-based magnetic sensor is provided. The magnetic sensor includes a substrate, an electrode layer formed on the substrate, and a pair of first and second sensing elements stacked on the substrate so as to be connected to the electrode layer, wherein directions of respective currents flowing through the first and second sensing elements via the electrode layer are opposite to each other.

Spin-orbit-torque based magnetic sensor and a magnetic field measurement method using a magnetic sensor

Disclosed herein is a spin-orbit torque device including a lower ferromagnetic layer, a non-magnetic layer bonded to the lower ferromagnetic layer, and an upper ferromagnetic layer bonded to the non-magnetic layer, wherein a magnetization orientation of the lower ferromagnetic layer is randomly distributed. According to the present disclosure, it is possible to provide a magnetic memory device which cannot be physically duplicated and has reconfigurability using a spin-orbit torque.

Spin-orbit torque device and manufacturing method thereof

A spin Hall magnetic sensor includes a plurality of magnetic thin film units including a magnetic layer stacked on a non-magnetic layer, and a plurality of non-magnetic substances disposed between the plurality of magnetic thin film units, The magnetic includes a Wheatstone bridge structure to observe a magnetic Hall resistance generated by a spin orbit torque (SOT).

Spin hall magnetic sensor and method of measuring magnetoresistance using the same

A three-terminal synaptic device includes a substrate; a source electrode and a drain electrode which are provided on the substrate and spaced apart from each other. The three-terminal synaptic device further includes: a channel layer provided on the substrate, the source electrode, and the drain electrode; an ion reservoir layer which stores active ions; a gate electrode provided on the ion reservoir layer; and an ion barrier layer disposed between the ion reservoir layer. In particular, the channel layer controls movement of active ions between the ion reservoir layer and the channel layer. The three-terminal synaptic device inhibits rapid movement of ions.

Three-terminal synaptic device

The present disclosure provides a method of detecting a magnetization signal of a physically unclonable functions (PUF) device including acquiring, by a magnetization signal detection sensor, an image of a magnetic layer of the PUF device including the magnetic layer having a perpendicular magnetization component and identifying a magnetization state of the magnetic layer from the image of the magnetic layer acquired by the magnetization signal detection sensor, and according to the present disclosure, it is possible to more efficiently check the magnetization signal of the PUF device and acquire a random unique ID according to magnetization.

Method of detecting magnetization signal of physically unclonable functions device and magnetization signal detection sensor

Growing community of inventors

Hwaseong-si, South Korea

Joon-Hyun Kwon