Skhynix Inc.

Osong Medical Innovation Foundation, Korea University Research and Business Foundation

Korea Institute of Energy Research

Chungbuk National University Industry-academic Cooperation Foundation

Joon-Ho Oh

Hyun Seok Lee

Ka-Hyun Kim

Disclosed are a method of forming a contact structure, a method of fabricating a semiconductor device, a contact structure, and a semiconductor device including the same. A method of forming a contact structure may comprise forming a porous silicon layer on a substrate by using an epitaxy process, forming a dielectric layer on the porous silicon layer, forming a metal layer on the dielectric layer, forming a silicide member having a three-dimensional structure in the porous silicon layer by diffusing metal atoms of the metal layer into the porous silicon layer through the dielectric layer and reacting the diffused metal atoms with the porous silicon layer in a heat treatment process, removing the metal layer and the dielectric layer, and forming a conductive layer in contact with the silicide member.

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Busan, South Korea

Joon-Ho Oh