Korea Kumho Petrochemical Co., Ltd.

Joon Hee Han

Hyun Sang Joo

Hyun Soon Lim

Jung-Hoon Oh

Dong Chul Seo

Jin Bong Shin

Jin Ho Kim

Tae Gon Kim

Provided are an additive for resist represented by the following formula (1), and a resist composition containing the additive. The additive according to the present invention can suppress leaching caused by water during an immersion lithographic process by increasing hydrophobicity of the surface of the resist film in the exposure at the time of applying the additive to a resist composition, and can form a fine resist pattern having excellent sensitivity and resolution at the time of applying the additive to a resist composition. wherein the substituents respectively have the same meanings as defined above.

Additive for resist and resist composition comprising same

A resist additive represented by Formula 1 below and a resist composition including the additive are disclosed. The resist additive improves hydrophobicity of the surface of the resist film to prevent materials from being leached in water during exposure of immersion lithography and is converted to have hydrophilicity by deprotection reaction during development. As a result, a micropattern of a resist film with excellent sensitivity and high resolution is formed.  In Formula 1, the substituents are defined as described in the specification.

Provided is a copolymer. The copolymer, when incorporated into a resist composition, can provide a satisfactory resist pattern with high sensitivity, high resolution, high etching resistance and a reduced amount of outgas.

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Namyangju-si, South Korea

Joon Hee Han