Samsung Electronics Co., Ltd.

Leland Stanford Junior University

Joon-hak Oh

Yong-Uk Lee

Bo-Sung Kim

Mun-Pyo Hong

Keun-Kyu Song

Young-Min Kim

Tae-Young Choi

Mun-pyo Hong

Soo-Jin Kim

Zhenan Bao

Seung-Hwan Cho

Young-jun Park

Example embodiments relate to a solar cell including organic nanowires. The solar cell may include a photoelectric conversion layer formed of a p-type material including an organic material and an n-type material including organic nanowires.

Solar cell having organic nanowires

According to an embodiment of the present invention, a manufacturing method of a display device includes forming a plurality of gate wires comprising a gate electrode on an insulating substrate, forming an electrode layer comprising a source electrode and a drain electrode spaced apart from each other to define a channel region on the gate electrode interposed therebetween, forming a first barrier wall having a first opening for exposing the channel region, a portion of the source electrode, and a portion of the drain electrode on the electrode layer where the first barrier wall has a surface, forming a shielding film to cover the channel region inside the first opening, treating the surface of the first barrier wall, removing the shielding film, and forming an organic semiconductor layer inside the first opening.

Display device and manufacturing method thereof

An organic thin film transistor array panel includes; a substrate, a data line formed on the substrate, a gate line intersecting the data line and including a gate electrode, a first interlayer insulating layer formed on the gate line and the data line and including a first opening exposing the gate electrode, a gate insulator formed in the first opening, a source electrode disposed on the gate insulator and connected to the data line, a pixel electrode disposed on the gate insulator and including a drain electrode opposing the source electrode, a insulating bank formed on the source electrode and the drain electrode, the insulating bank defining a second opening which exposes portions of the source electrode and the drain electrode, and an organic semiconductor formed in the second opening.

Organic thin film transistor array panel and method for manufacturing the same

A thin film transistor substrate includes an insulating substrate, a gate electrode formed on the insulating substrate, a first gate insulating film formed on the gate electrode and having an opening for exposing at least part of the gate electrode, a second gate insulating film covering the gate electrode exposed by the opening and having a larger dielectric constant than the first gate insulating film, a source electrode and a drain electrode disposed apart from each other in a central area of the second gate insulating film and defining a channel region there between, and an organic semiconductor layer formed in the channel region. A method for forming the TFT substrate is also provided. Thus, the present invention provides a TFT substrate in which a characteristic of a TFT is improved.

Thin film transistor substrate and method for fabricating the same

The present invention relates to a thin film transistor substrate comprising: an insulating substrate; a source electrode and a drain electrode which are formed on the insulating substrate and separated from each other and have a channel area therebetween; a wall exposing at least portions of the source electrode and the drain electrode, respectively, encompassing the channel area, and formed of fluoropolymer; and an organic semiconductor layer formed inside the wall. Thus, the present invention provides a TFT substrate where an organic semiconductor layer is planarized. Further, the present invention also provides a method of making a TFT substrate of which an organic semiconductor layer is planarized.

Thin film transistor substrate and method of making the same

An inkjet printing system according to an exemplary embodiment of the present invention includes an inkjet printing chamber depositing ink on a substrate, and a drying chamber spaced from inkjet printing chamber by a predetermined interval and drying the ink by regulating a vapor pressure of a solvent of the ink deposited on substrate. The drying chamber is provided separately, and the vapor pressure of the solvent within the drying chamber is regulated, so that the drying speed of the ink is regulated so as to improve the crystallinity of the organic semiconductor.

Inkjet printing system for manufacturing thin film transistor array

The present disclosure relates to a display device comprising an insulating substrate; a source electrode and a drain electrode on the insulating substrate and separated by a channel area; an organic semiconductor layer formed in the channel area and on at least a portion of the source electrode and at least a portion of the drain electrode; and a self-assembly monolayer having a first portion disposed between the organic semiconductor layer and the source electrode and a second portion disposed between the organic semiconductor layer and the drain electrode to reduce contact resistance between the electrodes and the organic semiconductor layer. Thus, embodiments of present invention provide a display device including a TFT that is enhanced in its performance.

Flat panel display and manufacturing method of flat panel display

An display device having a thin film transistor with improved characteristics comprising a gate conductor including a gate electrode formed on an insulating substrate; a gate insulating layer formed on the gate electrode; a conductive layer comprising a plurality of layers including a source electrode and a drain electrode formed on the gate insulating layer and separated from each other across the gate electrode to define a channel region; and an organic semiconductor layer formed in the channel region, wherein the conductive layer comprises a metal layer and a transparent electrode layer.

Growing community of inventors

Yongin-si, South Korea

Joon-hak Oh