Samsung Display Co., Ltd.

Joon Geol Kim

Kang Moon Jo

Young Joo Choi

Seung-Ho Jung

Woo Geun Lee

Woo-Seok Jeon

Sho Yeon Kim

Byung Hwan Chu

Si Joon Kim

Hee Seon Kim

Jong-In Kim

Seung Ho Jung

Young Jae Jeon

Seung Sok Son

Seok Hwan Bang

Hyun Seong Kang

A display device according to an embodiment includes: a substrate; a first conductive layer positioned on the substrate; a semiconductor layer positioned on the first conductive layer; a second conductive layer positioned on the semiconductor layer; an oxygen supply layer positioned under the second conductive layer, in contact with the second conductive layer, and having the same planar shape as the second conductive layer; and a light-emitting element connected to the second conductive layer, wherein the oxygen supply layer includes a metal oxide that includes one or more of indium, zinc, tin, or gallium, or alloys thereof.

Display device and manufacturing method thereof

An array test apparatus includes a signal transmission unit which transmits a data signal to each of a plurality of data lines of a low-temperature polysilicon ('LTPS') substrate, a signal measurement unit which measures the data signal of each of the data lines of the LTPS substrate, a timer which generates a horizontal period for setting a section in which the data signal is transmitted from the signal transmission unit to each of the data lines and a section in which the data signal output from each of the data lines is measured by the signal measurement unit, and a determination unit which determines whether each of the data lines of the LTPS substrate is normal based on the data signal measured by the signal measurement unit.

Array test apparatus and method

A liquid crystal display and a method of fabricating a liquid crystal display (LCD), the LCD including a substrate; gate wiring including a gate pad, a gate electrode, and a gate line, which are formed on the substrate; a gate insulating layer disposed on the gate wiring; an electrode pattern including a connecting electrode, which is disposed on the gate insulating layer and is electrically connected to the gate pad, a source electrode and a drain electrode, which partially overlap the gate electrode; a pixel electrode, which is electrically connected to the drain electrode; a data line, which intersects the gate line; a semiconductor layer disposed on the gate electrode; first auxiliary wiring overlapping the data line and spaced from the semiconductor layer; and second auxiliary wiring overlapping the gate line.

Liquid crystal display and method of fabricating the same

A thin film transistor array panel is disclosed. The thin film transistor array panel may include a gate line disposed on a substrate and including a gate electrode, a semiconductor layer including an oxide semiconductor disposed on the substrate, a data wiring layer disposed on the substrate and including a data line crossing the gate line, a source electrode connected to the data line and a drain electrode facing the source electrode, a polymer layer covering the source electrode and the drain electrode, and a passivation layer disposed on the polymer layer. The data wiring layer may include copper or a copper alloy and the polymer layer may include fluorocarbon.

Thin film transistor array panel and method for manufacturing the same

A thin film transistor array panel includes: a gate line including a gate electrode; a first gate insulating layer on the gate line; a semiconductor layer on the first gate insulating layer and overlapping the gate electrode; a second gate insulating layer on the semiconductor layer and the first gate insulating layer, and an opening in the second gate insulating layer and through which the semiconductor layer is exposed; drain and source electrodes on the second gate insulating and semiconductor layers and facing each other; a first field generating electrode; and a second field generating electrode connected to the drain electrode. The semiconductor layer includes an oxide semiconductor layer, and first and second auxiliary layers on the oxide semiconductor layer and separated from each other. An edge of the drain and source electrodes is disposed inside an edge of the first and second auxiliary layers, respectively.

Thin film transistor array panel having double-layered oxide semiconductor structure and method for manufacturing the same

Growing community of inventors

Hwaseong-si, South Korea

Joon Geol Kim