Samsung Electronics Co., Ltd.

Joohyeong Yoon

Youngjin Cho

Jongmin Kim

Keunhwan Lee

Kyungjune Cho

Minsik Oh

A memory system includes a memory controller and a memory device including a plurality of dies, each die including a plurality of blocks. A plurality of commands are configured to control the memory device in units of super blocks. During a first time interval, a first erase operation is performed on a first-first block among the first-first block to a first-Mth block, and a first program operation is performed on a second-first block to a second-Mth block, based on the first commands. During a second time interval, a second erase operation is performed on a first-second block among the first-first block to the first-Mth block, and a second program operation is performed on the first-first block and one or more blocks among the second-first block to the second-Mth block, based on the second commands.

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Seoul, South Korea

Joohyeong Yoon