Samsung Display Co., Ltd.

Yonsei University

Joohye Jung

Dong-Hyun Lee

Keonwoo Kim

Sangmi Jeon

Wonjang Ki

Mijin Jun

Donghyun Lee

Deukjong Kim

Zail Lhee

Hyun Jae Kim

Yongsung Park

Junghun Yi

You Seung Rim

Dong Lim Kim

Hyunwoo Kim

A display panel includes a shielding layer overlapped with a semiconductor layer of a transistor connected between a data line and a driving transistor.

Display panel

A display device includes: a base layer having a first area and a second area adjacent to the first area; a plurality of pixels on the first area of the base layer; a power line configured to supply the plurality of pixels with power; a power pattern on the second area and electrically connected to the power line; and a protrusion on the second area, the protrusion surrounding at least a portion of the first area and including a first protruding portion and a second protruding portion on the first protruding portion, wherein the power pattern includes an overlapping portion between the first protruding portion and the second protruding portion, the overlapping portion having an opening.

Display device

A display device includes: a base layer including a display area and a non-display area; a circuit element layer disposed on the base layer; a display element layer disposed on the circuit element layer; a plurality of signal pads disposed on the base layer, wherein the plurality of signal pads are spaced a predetermined interval from each other, and are electrically connected to the circuit element layer; and an input sensing layer including a conductive layer and an input insulation layer, wherein the conductive layer is disposed on the display element layer, and the input insulation layer covers the conductive layer and a portion of each of the signal pads. Each of the signal pads includes a first pad portion and a second pad portion, wherein the first pad portion overlaps the input insulation layer, and the second pad portion does not overlap the input insulation layer.

Methods of forming an oxide material layer are provided. The method includes mixing a precursor material with a peroxide material to form a precursor solution, coating the precursor solution on a substrate, and baking the coated precursor solution.

Compositions used in formation of oxide material layers, methods of forming an oxide material layer using the same, and methods of fabricating a thin film transistor using same

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Seoul, South Korea

Joohye Jung