Semiconductor Components Industries, LLC

JooHoon Kim

Jintae Kim

Jihoon Jang

Sangcheol Moon

Inki Park

Wontae Lee

KyungOun Jang

A controller includes a feedback sensing circuit that generates a feedback current during a first time interval in a switching period of a power converter based on an output voltage of the power converter and to generate a digital sensing signal indicative of a duration of the first time interval, and a feedback signal generator that determines a magnitude of the feedback current that flows during the first time interval based on a value of the digital sensing signal and to generate a digital feedback signal based on the determined magnitude of the feedback current. The controller adjusts the output voltage of the power converter in response to the digital feedback signal.

Circuit and method for controlling power converter based on feedback current

A method operates a switch controller of a power switch. The method includes determining a compensation value based on a quarter period of a resonant cycle of a drain voltage and a propagation delay time, the drain voltage being a voltage at a drain of the power switch, generating a sensing signal based on detection of a valley point of the drain voltage, and generating a control signal for controlling the power switch based on the sensing signal and the compensation value to turn on the power switch at a time corresponding to the valley point of the drain voltage.

Switch controller and compensation method of valley detection error

A power converter includes a transformer, a first primary side transistor coupled to the primary winding, a primary side controller that provides a gate signal to a gate of the first primary side transistor, a first synchronous rectifier (SR) transistor, and an SR controller. The first SR transistor has a drain coupled to a secondary winding of the transformer, a gate for receiving a first SR gate signal, and a source coupled to a first output terminal of the power converter. The SR controller is coupled to the gate and drain of the first SR transistor, for activating the first SR gate signal when a voltage on the drain falls below a turn-on threshold, and deactivating the first SR gate signal when a voltage on the drain rises above a variable turn-off threshold, wherein the variable turn-off threshold increases over an expected on-time of the first SR gate signal.

Growing community of inventors

Bucheon, South Korea

JooHoon Kim