Northwestern University

Uchicago Argonne, LLC

Joohoon Kang

Mark C Hersam

Joshua D Wood

Alexander A Green

Jung-Woo T Seo

Kan-Sheng Chen

Chad Husko

David Lam

Jeff Guest

Xavier Checoury

Preparation of two-dimensional indium selenide, other two-dimensional materials and related compositions via surfactant-free deoxygenated co-solvent systems.

Optoelectronically-active two-dimensional indium selenide and related layered materials via surfactant-free deoxygenated co-solvent processing

Anhydrous liquid-phase exfoliation of germanium sulfide to provide few-layer germanium sulfide, as can be incorporated into electronic devices such as but not limited to batteries and cells comprising such materials.

Anhydrous liquid-phase exfoliation of pristine electrochemically-active GeS nanosheets

A composition includes a few-layer phosphorene nanomaterial comprising at least one of mono-, bi-, and n-layer phosphorene nanosheets, where n is an integer selected from 3 to 6; deoxygenated water; and at least one amphiphilic surface active component.

Composition comprising optically and electronically active phosphorene

Separation of rhenium disulfide nanomaterials and related fluid density gradient media.

Layer-by-layer sorting of rhenium disulfide via high-density isopycnic density gradient ultracentrifugation

Hybrid silicon lasers and amplifiers having resonator cavities within a silicon substrate and a two-dimensional material film on the substrate as an optical gain medium are described. The two-dimensional material film may be formed of one or more atomic layers of phosphorene (BP). The number of phosphorene layers may be adjusted to tune the emission wavelength of the hybrid devices.

Hybrid silicon lasers and amplifiers with 2D phosphorene film

Methods for the preparation of few-layer phosphorene, compositions thereof and related devices fabricated therefrom.

Stable aqueous dispersions of optically and electronically active phosphorene

The present teachings provide, in part, methods of separating two-dimensional nanomaterials by atomic layer thickness. In certain embodiments, the present teachings provide methods of generating graphene nanomaterials having a controlled number of atomic layer(s).

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Evanston, IL, United States of America

Joohoon Kang