Samsung Electronics Co., Ltd.

Cornell University

Ajou University Industry-academic Cooperation Foundation

Jooho Lee

Yongsung Kim

Jeonggyu Song

Younsoo Kim

Kyooho Jung

Haeryong Kim

Boeun Park

Younggeun Park

Jaeho Lee

Myoungho Jeong

Changseung Lee

Yong-hee Cho

Jeongil Bang

Changsoo Lee

Junghwa Kim

Seungwoo Jang

Narae Han

Jeong-Gyu Song

Hyosik Mun

Jinhong Kim

Hyangsook Lee

Eunha Lee

Woosung Jeon

Jeoyoung Shim

Hyungjun Kim

Jaewoo Lee

Wooyoung Yang

Kiyoung Lee

Eunae Cho

Jiwoon Park

Gyeongsu Park

Bo-Eun Park

Heegoo Kim

Eunsun Kim

Jungmin Park

Chan Kwak

Cheheung Kim

Byunghoon Na

Woojin Lee

Junsik Hwang

Sanghoon Song

Sungjin Lim

Jinyoung Hwang

Jeongyub Lee

Euncheol Do

Xianyu Wenxu

Sunghee Lee

Kyuho Cho

Darrell G Schlom

Jaekwan Kim

Yongyoung Park

Eunhyoung Cho

SangWoon Lee

Yong-Hee Cho

Yongjun Choi

Jaeyong Sim

Inyong Song

JaeWoo Lee

Changyoul Moon

Zhe Wang

Gerhard H Olsen

Natalie M Dawley

Craig J Fennie

An electronic device and a manufacturing method including a dielectric layer according to at least some embodiments are disclosed. The electronic device includes a first electrode, a second electrode spaced apart from the first electrode, a first dielectric layer between the first electrode and the second electrode, a second dielectric layer having a rutile phase, a third dielectric layer between the first dielectric layer and the second electrode, and a third dielectric layer between the second dielectric layer and the second electrode and including a material having a higher energy bandgap than a material included in the second dielectric layer.

Electronic device including dielectric layer and method of manufacturing the electronic device

A capacitor includes a lower electrode including a perovskite material, an upper electrode spaced apart from the lower electrode, a dielectric layer positioned between the lower electrode and the upper electrode and including a perovskite material, and a passivation layer positioned between the lower electrode and the dielectric layer and including SrTiOin which a content of Ti is greater than a content of Sr.

Capacitor, method of fabricating the capacitor, and electronic device including the capacitor

An electronic device includes: a frame including a side wall and at least partially forming an antenna; a bracket provided within the frame; a first printed circuit board provided on the bracket and including at least one grounding portion; a second printed circuit board provided within the frame; and a screw, where the second printed circuit board includes: a first portion coupled to the first printed circuit board; an extension portion extending from the first portion between the side wall of the frame and the bracket; a second portion extending from the extension portion between the first printed circuit board and the bracket; and a conductive trace extending from the first portion to the second portion through the extension portion, and where the conductive trace is electrically connected to the at least one grounding portion of the first printed circuit board in the second portion.

Wearable electronic device

Provided is a semiconductor device including a lower electrode, an upper electrode isolated from direct contact with the lower electrode, and a dielectric layer between the lower electrode and the upper electrode, the dielectric layer comprising a first metal oxide area, a second metal oxide area, and a third metal oxide area. The third metal oxide area is between the first metal oxide area and the second metal oxide area, and includes boron and one or more metal elements selected from aluminum (Al), magnesium (Mg), silicon (Si), or beryllium (Be). In the third metal oxide area, a content of boron (B) is less than or equal to a content of the metal elements of Al, Mg, Si, and/or Be.

High-K capacitor dielectric having a metal oxide area comprising boron, electrical device and semiconductor apparatus including the same

Provided are a semiconductor device and a semiconductor apparatus including the same, the semiconductor device including: a first electrode; a second electrode apart from the first electrode; a dielectric structure provided between the first electrode and the second electrode and including a dielectric layer including a metal oxide represented by MO; and a leakage current reducing layer including a metal oxide represented by La'M′′O.

Device with dielectric metal oxide layers and semiconductor apparatus including the same

A capacitor includes a lower electrode layer including a first conductive layer and a second conductive layer on the first conductive layer, the second conductive layer including SnOdoped with an impurity; a dielectric layer on the second conductive layer, the dielectric layer including a rutile-phase oxide; and an upper electrode layer on the dielectric layer.

Capacitor, memory device including the capacitor

An integrated circuit device includes a lower electrode including a niobium (Nb)-containing layer doped with titanium (Ti), a dielectric layer on the lower electrode, and an upper electrode that covers the dielectric layer.

Integrated circuit device

Provided are a thin film structure, a capacitor including the thin film structure, a semiconductor device including the thin film structure, and a method of manufacturing the thin film structure, in which the thin film structure may include: a first electrode thin film disposed on a substrate and including a first perovskite-based oxide; and a protective film disposed on the first electrode thin film and including a second perovskite-based oxide that is oxygen-deficient and includes a doping element. The thin film structure may prevent the deterioration of conductivity and a crystalline structure of a perovskite-based oxide electrode, which is a lower electrode, even in a high-temperature oxidizing atmosphere for subsequent dielectric film deposition.

Thin film structure including method of manufacturing

A capacitor includes a first electrode including a first reinforcement material having a perovskite crystal structure; and a first metallic material having a perovskite crystal structure; a second electrode on the first electrode; and a dielectric layer between the first electrode and the second electrode, wherein the first metallic material has greater a greater electronegativity than that of the first reinforcement material.

Capacitor and semiconductor device including the same

A thin film structure includes a first conductive layer, a dielectric material layer on the first conductive layer, and an upper layer on the dielectric material layer. The dielectric material layer including HfAOsatisfies at least one of a first condition and a second condition. In the first condition the dielectric material layer is formed to a thickness of 5 nm or less and in the second condition the x in HfAOis in a range of 0.3 to 0.5.

Thin film structure including dielectric material layer, method of manufacturing the same, and electronic device employing the same

Provided are capacitors of semiconductor devices, wherein the capacitors may be used in a high-frequency operation environment. A capacitor includes a first electrode layer, a dielectric layer on the first electrode layer, and a second electrode layer on the dielectric layer, wherein the dielectric layer includes a plurality of unit dielectric layers, and the unit dielectric layer includes first and second sub-dielectric layers that have different dielectric constants and conductivities from each other and are connected in series, and the first and second sub-dielectric layers have a conductivity difference so that the capacitance of the dielectric layer converges to the capacitance of the unit dielectric layer.

Capacitors of semiconductor device capable of operating in high frequency operation environment

A capacitor including a lower electrode; an upper electrode apart from the lower electrode; and a between the lower electrode and the upper electrode, the dielectric including a dielectric layer including TiO, and a leakage current reducing layer including GeOin the dielectric layer. Due to the leakage current reducing layer, a leakage current is effectively reduced while a decrease in the dielectric constant of the dielectric thin-film is small.

Capacitor and electronic device including the same

Disclosed are semiconductor memory devices and methods of fabricating the same. The semiconductor memory devices may include a capacitor including first and second electrodes and a dielectric layer. The dielectric layer may include a zirconium aluminum oxide layer including a first zirconium region adjacent to the first electrode, a first aluminum region, a second aluminum region adjacent to the second electrode, and a second zirconium region between the first and second aluminum regions. The first and second zirconium regions may include zirconium and oxygen and may be devoid of aluminum. The first and second aluminum regions may include aluminum and oxygen and may be devoid of zirconium. The first aluminum region and the first zirconium region may be spaced apart by a first distance, and the first aluminum region and the second zirconium region may be spaced apart by a second distance shorter than the first distance.

Semiconductor memory devices and methods of fabricating the same

A thin film structure including a dielectric material layer, a method of manufacturing the same, and an electronic device employing the same are disclosed. The disclosed thin film structure includes a first conductive layer; a first dielectric material layer on the first conductive layer, the first dielectric material layer having a crystal phase and including a metal oxide; an InO-based seed material layer formed on the first dielectric material layer and having a thickness less than a thickness of the first dielectric material layer; and a second conductive layer formed on the seed material layer.

Thin film structure including dielectric material layer, and method of manufacturing the same, and electronic device employing the same

An anti-ferroelectric thin-film structure including a dielectric layer including an anti-ferroelectric phase of hafnium oxide; and an inserted layer in the dielectric layer, the inserted layer including an oxide. An electronic device to which the anti-ferroelectric thin-film structure has been applied may secure an operating voltage section with little hysteresis.

Anti-ferroelectric thin-film structure and electronic device including the same

Growing community of inventors

Hwaseong-si, South Korea

Jooho Lee