Samsung Electronics Co., Ltd.

Samsung Sdi Co., Inc.

Joohee Seo

Seungjae Lee

Sung-Hyun Jung

Kyuyoung Hwang

Ohyun Kwon

Hyeonho Choi

Byoungki Choi

Sangshin Lee

Sangmo Kim

Eun Sun Yu

Dong Wan Ryu

Heejung Kim

Chunkeun Jang

Taehong Min

Chorong Park

Eunsuk Hwang

A method of fabricating a three-dimensional semiconductor memory device includes forming a cell stack layer covering key and cell regions of a substrate and including a variable resistance layer and a switching layer, forming key mask patterns on the cell stack layer of the key region and cell mask patterns on the cell stack layer of the cell region, and simultaneously forming a plurality of key patterns on the key region and a plurality of memory cells on the cell region by etching the cell stack layer using the key and cell mask patterns as an etching mask. Each memory cell includes a variable resistance pattern and a switching pattern formed by etching the variable resistance layer and the switching layer. Each key pattern includes a dummy variable resistance pattern and a dummy switching pattern formed by etching the variable resistance layer and the switching layer.

Method of fabricating three-dimensional semiconductor memory device

Disclosed are a composition for an organic optoelectric device including at least one first compound for an organic optoelectric device represented by Chemical Formula 1; and at least one second compound for an organic optoelectric device including a carbazole moiety represented by Chemical Formula 2, an organic optoelectric device include the same, and a display device. Details of Chemical Formula 1 and Chemical Formula 2 are the same as defined in the specification.

Composition for organic optoelectric device and organic optoelectric device and display device

A condensed cyclic compound represented by Formulae 1A or 1B: 

Condensed cyclic compound and organic light-emitting device including the same

Growing community of inventors

Suwon-si, South Korea

Joohee Seo