Kt Corporation

Samsung Electronics Co., Ltd.

Joo-Young Yoon

Tae-hyuk Ahn

Yung-Ha Ji

In-ho Nam

Sang-Bum Lee

Hye-Mi Kim

Kyu-Jeong Han

Se-Cheol Park

Chang-Seuk Ok

Jaeho Chung

A contents distribution server using an identification code of contents is disclosed. The apparatus includes an interface providing unit configured to provide an interface for registration of the contents to a device, if a request for the registration of the contents is received from the device; an code information extraction unit configured to extract code information from input information through the interface; an identification code generation unit configured to generate the identification code by combining codes corresponding to the extracted code information, and a contents distribution unit configured to match the contents with the generated identification code, register the matched contents in a database and transmit the registered contents to a contents managing server with reference to the identification code.

Contents providing scheme using identification code

A wireless access point and a method may be provided for detecting a malicious device in a network. The wireless access point may include a controller, a search unit, a message generation unit, and a determination unit. The controller may be configured to initiate a malicious device detection mode regularly at predefined intervals. The search unit may be configured to detect candidate devices broadcasting a signal with the first SSID from neighbor devices in an associated network. The message generation unit may be configured to generate a test message in the malicious device detection mode and transmit the test message to the candidate devices. The determination unit may be configured to determine a corresponding device in the candidate device as a malicious device when a test response message is not received from the corresponding device in response to the test message.

Detecting malicious device

A method for manufacturing a capacitor structure of a highly integrated semiconductor memory device. A first conductive layer is formed on a semiconductor substrate, and a first pattern is formed on the first conductive layer. A first material layer is formed on the resultant structure whereon the first pattern is formed, and the first material layer is etched anisotropically, to thereby form a spacer on the side of the first pattern. After etching the first conductive layer using the spacer as an etch-mask, the first pattern is removed. A second conductive layer is formed on the resultant structure and etched anisotropically. The spacer is removed, to thereby form a storage electrode of a capacitor. The distance between neighboring capacitors can be minimized to a value smaller than the limitation imposed by the lithographic technique, to thereby maximize the area of the capacitor.

Method for manufacturing a capacitor structure of a semiconductor memory

Growing community of inventors

Seoul, South Korea

Joo-Young Yoon