Samsung Electronics Co., Ltd.

Joo-Yong Park

Myeon-Kee Youn

Daeseok Byeon

Chanho Kim

Il-Han Park

Bong-Soon Lim

Joon-Young Park

Seong-Joon Jeon

June-Hong Park

Chang-Yeon Yu

Kui-Han Ko

Seong-Yun Ko

Sung-Jun Kim

Hak-Hoon Song

Seong-Jae Min

Bo-Seung Hwang

Min-Cheul Cha

To program in a nonvolatile memory device including a cell region including first metal pads and a peripheral region including second metal pads and vertically connected to the cell region by the first metal pads and the second metal pads, a memory block is provided with a plurality of sub blocks disposed in a vertical direction where the memory block includes a plurality of cell strings each including a plurality of memory cells connected in series and disposed in the vertical direction. A plurality of intermediate switching transistors are disposed in a boundary portion between two adjacent sub blocks in the vertical direction. Each of the plurality of intermediate switching transistors is selectively activated based on a program address during a program operation. The selectively activating each of the plurality of intermediate switching transistors includes selectively turning on one or more intermediate switching transistors in a selected cell string based on the program address.

Nonvolatile memory device with intermediate switching transistors and programming method

A three-dimensional semiconductor memory device, including a peripheral circuit structure including a first metal pad and a cell array structure disposed on the peripheral circuit structure and including a second metal pad. The peripheral circuit structure may include a first substrate including a first peripheral circuit region and a second peripheral circuit region, first contact plugs, second contact plugs, and a first passive device on and electrically connected to the second contact plugs. The cell array structure may include a second substrate disposed on the peripheral circuit structure, the second substrate including a cell array region and a contact region. The cell array structure may further include gate electrodes and cell contact plugs. The first passive device is vertically between the gate electrodes and the second contact plugs and includes a first contact line. The first metal pad and the second metal pad may be connected by bonding manner.

Three-dimensional semiconductor memory device

A three-dimensional semiconductor memory device, including a first chip and a second chip stacked on the first chip may be provided. The first chip may include a first substrate including a first peripheral circuit region and a second peripheral circuit region, first contact plugs, and second contact plugs, and a passive device on and electrically connected to the second contact plugs. The second chip may include a second substrate including a cell array region and a contact region, which vertically overlap the second peripheral circuit region and the first peripheral circuit region of the first chip, respectively. The second chip may further include gate electrodes, and cell contact plugs disposed on the contact region of the second substrate and on end portions of the gate electrodes. The first passive device may be vertically between the gate electrodes and the second contact plugs and may include a first contact line.

To program in a nonvolatile memory device, a memory block is provided with a plurality of sub blocks disposed in a vertical direction where the memory block includes a plurality of cell strings each including a plurality of memory cells connected in series and disposed in the vertical direction. A plurality of intermediate switching transistors are disposed in a boundary portion between two adjacent sub blocks in the vertical direction. Each of the plurality of intermediate switching transistors is selectively activated based on a program address during a program operation. The selectively activating each of the plurality of intermediate switching transistors includes selectively turning on one or more intermediate switching transistors in a selected cell string based on the program address.

A wireless network system and method to secure Quality of Service (QoS) according to a type of Wireless Local Area Network (WLAN) service in a WLAN communication system based on IEEE 802.11 includes: an authentication server adapted to set a priority for an access category of a wireless network service requested by a user to perform an authentication procedure in response to a user terminal requesting authentication for access to a wireless network; and an Access Point (AP) adapted to receive and store access category information of the user terminal authenticated by the authentication server and to compare access category information contained in a packet received from the user terminal to the previously stored access category information of the user terminal to control access to the wireless network.

Securing quality of service (QoS) according to type of wireless local area network (WLAN) service

A method and apparatus for transmitting frames in a Wireless Local Area Network (WLAN), each station in the WLAN determines whether there is another station in a hidden state. The station transmits a frame to an Access Point (AP) without performing an Request To Send/Clear To Send (RTS/CTS) mechanism when there is another station in a hidden state, thereby improving use efficiency of the wireless network and minimizing frame transmission delay.

Transmitting frames in wireless local area network (WLAN)

An uplink signal receiving method and apparatus using successive interference cancellation (SIC) in a wireless transmission system based on Orthogonal Frequency Division Multiple Access (OFDMA) are provided. The uplink signal receiving method includes storing in a provisional storage each uplink intermediate frequency (IF) signal received through an antenna of a base station and subjected to analog-to-digital conversion; analyzing the uplink IF signals stored in the provisional storage and determining a terminal to be restored; converting a data symbol of the determined terminal to be restored from a time domain into a frequency domain; performing channel/phase correction on the converted data symbol; demodulating the corrected data symbol; determining if there is a terminal to be restored; and when there is a terminal to be restored, removing the demodulated data symbol of the terminal to be restored from the temporarily stored uplink IF signals and then updating the uplink IF signals; thereby, to reducing interference between sub-carriers of the terminals caused by deviation of a center frequency of the sub-carriers of terminals constituting the uplink signal in the OFDMA-based wireless transmission system.

Uplink signal receiving method and apparatus using successive interference cancellation in wireless transmission system based on OFDMA

A method and apparatus save power in a multimode wireless terminal having plural communication modems for supporting different communication systems. The multimode wireless terminal performs its basic functions of reception and transmission, while only one of the communication modems is turned on and the others are turned off so as to reduce power consumption. This results in extension of the utilization time of the multimode wireless terminal.

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Seongnam-si, South Korea

Joo-Yong Park