Samsung Electronics Co., Ltd.

Joo-yeong Gong

Yoon-Dong Park

Yong-Jei Lee

Seoung-hyun Kim

Hee-Woo Park

Seung-Won Cha

Sung-Chul Kim

Jung-Chak Ahn

Kyoung-won Na

Tae-Yon Lee

Myung-won Lee

An image sensor includes a substrate comprising a first face and a second surface which faces the first surface and on which light is incident, a semiconductor photoelectric conversion device on the substrate, a gate electrode located between the first surface of the substrate and the semiconductor photoelectric conversion device and extending in a first direction perpendicular to the first surface, and an organic photoelectric conversion device stacked on the second surface of the substrate.

Image sensor including photoelectric conversion devices

A depth pixel of a three-dimensional image sensor includes a first photo gate which is turned on/off in response to a first photo control signal, a first photo detection area configured to generate first charges based on a received light reflected from a subject when the first photo gate is turned on, a first transmission gate which is turned on/off in response to a first transmission control signal, a first floating diffusion area configured to accumulate the first charges generated from the first photo detection area when the first transmission gate is turned on, and a first compensation unit configured to generate second charges which are different from the first charges based on ambient light components included in the received light to supply the second charges to the first floating diffusion area.

Depth pixel included in three-dimensional image sensor, three-dimensional image sensor including the same and method of operating depth pixel included in three-dimensional image sensor

A depth pixel of an image sensor includes a depth sensing element configured to generate first charges that are photo-electrically converted from a light reflected from an object, a first floating diffusion node configured to receive the first charges from the depth sensing element, a second floating diffusion node configured to output second charges corresponding to a component of a reflection light where a component of an ambient light is cancelled, and an ambient light cancellation circuit configured to detect the ambient light to control a barrier level of a charge transfer path between the first floating diffusion node and the second floating diffusion node in response to the ambient light.

Depth pixel and image pick-up apparatus including the same

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Suwon-si, South Korea

Joo-yeong Gong