Samsung Electronics Co., Ltd.

Korea Institute of Science and Technology

Ki-won Nam

Pyong-taek Kim

Joo-won Lee

Kang-soo Chu

Jong-Ho Yang

Jae-eun Park

Jung Park

Jai Kyeong Kim

June Whan Choi

Jae-Hyun Lim

Dae-Seok Na

Dong-Suk Shin

Hoon Sik Kim

Young-Chul Kim

Tae-Gyun Kim

Jae-Eun Park

Ki-yeon Park

Tae-hwan Cha

Oh-yun Kwon

Byeong-kwon Ju

Bong-Geun Lee

Ki Hyung Kang

Jong-ho Yang

Jun-hyung Shin

Jai-Kyeong Kim

Pyong-Taek Kim

Ji-Hyuk Cha

Kwang-Ho Kim

Nam-A Park

A display device including quantum rods is provided. The display device includes a light source generating light, a lightguide plate changing a path of the light generated from the light source and outputting the light to a front surface, a first polarizing plate arranged on top of the lightguide plate and generating first polarized light, a liquid crystal panel arranged on top of the first polarizing plate and displaying an image by using the first polarized light, a second polarizing plate arranged on top of the liquid crystal panel and generating second polarized light, and a quantum rod layer arranged on top of the second polarizing plate, divided into a plurality of pixels, and containing quantum rods in at least one of the pixels. A polarizing axis of the second polarized light is perpendicular to a polarizing axis of polarized light emitted by the quantum rod layer.

Display device with quantom rods

A system for inserting advertisement data into broadcast data and method thereof are provided. The system and method can output advertisement data to a certain portion of a lower end of a screen image of the new channel for a certain time when a current channel is changed to a different broadcast channel according to a viewer's intention while the viewer is viewing a broadcast program, thus minimizing viewer's reluctance to the advertisement output, reducing the burden of an advertiser, and guaranteeing a visual continuity of a broadcast program desired to be searched. Using the present invention, when channels are switched for searching for broadcast programs or when power is turned on or off, advertisement data can be output to the same screen while outputting a pertinent broadcast program, thereby exposing the advertisement data without interrupting the broadcast program.

System for controlling automatic exposure of broadcast advertisement data and method for same

Provided are a display device and method for altering images, the apparatus including: an input unit operable to receive a left image and a right image; and an image altering unit which is operable to alter the received left image and the received right image and to output an output image signal including the altered left image and the altered right image, wherein the left image is altered by changing a first portion, which is near a boundary area in the left image, and wherein the right image is altered by changing a second portion, which is near a boundary area in the right image.

Apparatus and method for altering images for three-dimensional display

The present invention relates to an organic/inorganic hybrid thin film passivation layer comprising an organic polymer passivation layer prepared by a UV/ozone curing process and an inorganic thin film passivation layer for blocking moisture and oxygen transmission of an organic electronic device fabricated on a substrate and improving gas barrier property of a plastic substrate; and a fabrication method thereof. Since the organic/inorganic hybrid thin film passivation layer of the present invention converts the surface polarity of an organic polymer passivation layer into hydrophilic by using the UV/ozone curing process, it can improve the adhesion strength between the passivation layer interfaces, increase the light transmission rate due to surface planarization of the organic polymer passivation layer, and enhance gas barrier property by effectively blocking moisture and oxygen transmission.

Organic/inorganic hybrid thin film passivation layer for blocking moisture/oxygen transmission and improving gas barrier property

In a method of manufacturing a semiconductor device, a conductive layer pattern may be formed on a substrate. An oxide layer may be formed on the substrate to cover the conductive layer pattern. A diffusion barrier layer may be formed by treating the oxide layer to increase an energy required for a diffusion of impurities. An impurity region may be formed on the substrate by implanting impurities into the conductive layer pattern and a portion of the substrate adjacent to the conductive layer pattern, through the diffusion barrier. The impurities in the conductive layer pattern and the impurity region may be prevented or reduced from diffusing, and therefore, the semiconductor device may have improved performance.

Methods of manufacturing semiconductor devices

In an electrode line structure of a semiconductor device and a method for forming the same, the electrode line structure comprises a semiconductor substrate, and electrode lines, which are formed on the semiconductor substrate, and have an inclined end in the long axis direction. The electrode lines each include a first line unit, which substantially functions as an electrode line, a second line unit, which has an inclined end in the long axis direction and is separated from the first line unit by a predetermined distance, and an insulating plug, which is interposed between the first line unit and the second line unit and electrically insulates the first line unit from the second line unit.

Electrode line structure having fine line width and method of forming the same

The present invention discloses an inorganic thin layer which is composed of an inorganic composite containing at least two kinds of inorganic materials and shows excellent moisture and oxygen proof, an organic electroluminescence device including the inorganic thin layer as a passivation layer, and a fabrication method thereof.

Inorganic thin layer, organic electroluminescence device including the same, and fabrication method thereof

A method is provided for forming a silicon dioxide film using atomic layer deposition (ALD), wherein a halogen- or NCO-substituted siloxane is used as a Si source. The method includes feeding a substituted siloxane as a first reactant onto a substrate to form a chemisorbed layer of the first reactant, and thereafter feeding a compound consisting of oxygen and hydrogen as a second reactant onto the chemisorbed layer to form the desired silicon dioxide film.

Method for forming silicon dioxide film using siloxane

Improved methods are disclosed for catalyst-assisted atomic layer deposition (ALD) to form a silicon dioxide layer having superior properties on a semiconductor substrate by using a first reactant component consisting of a silicon compound having at least two silicon atoms, or using a tertiary aliphatic amine as the catalyst component, or both in combination, together with related purging methods and sequencing.

Methods for forming silicon dioxide layers on substrates using atomic layer deposition

Provided is a method of forming a fine pattern, in which a silicon oxide layer is formed on a photoresist pattern and dry etching is performed on the resultant structure. According to the method, a photoresist pattern is formed on a material layer on which a fine pattern is to be formed, a silicon oxide layer is conformally deposited on the photoresist pattern without damaging the photoresist pattern, and dry etching is performed on a lower layer. During the dry etching, spacers are formed along the sidewalls of the photoresist pattern, and then, a polymer layer is formed on the photoresist pattern. Accordingly, it is possible to prevent the thinning of the photoresist pattern so that a desired pattern can be obtained, and further, to prevent striation or wiggling from occurring on the patterned material layer.

Method of forming fine patterns using silicon oxide layer

A method for manufacturing a semiconductor device employing a dielectric layer for forming a conductive layer into a three-dimensional shape. The dielectric layer is formed on a substrate in such a manner as to provide an intrinsic etch rate within the layer which increases in the direction of the thickness or depth of the dielectric layer. This variable intrinsic etch rate within the dielectric layer is achieved by changing one of a plurality of deposition variables. Once formed, the dielectric layer is selectively etched to form a through hole to contact a conductive area underlying the dielectric layer. A conductive layer is formed in the through hole, which may be a storage node of a capacitor.

Method for manufacturing semiconductor device employing dielectric layer used to form conductive layer into three dimensional shape

A method for manufacturing a semiconductor device including a metal contact and a capacitor. Gate structures are formed on a semiconductor substrate, and a first dielectric layer is formed on the semiconductor substrate to cover the gate structures. A bit line is formed on the first dielectric layer and a second dielectric layer is formed on the first dielectric layer to cover the bit line. A buried contact is formed to be electrically connected to the semiconductor substrate between the gate structures by etching the second dielectric and first dielectric layer. A third dielectric layer is formed on the second dielectric layer. A lower electrode of a capacitor, a dielectric layer, and an upper electrode are formed to be connected to the buried contact. A fourth dielectric layer is formed to cover the capacitor. A plurality of contact holes are formed to expose the upper electrode, the bit line, an active region of the semiconductor substrate, and the gate structures by selectively etching the fourth dielectric layer and the underlying dielectric layers. A plurality of metal contacts are formed to be electrically connected to the upper electrode, the semiconductor substrate, the bit line, and the gate structures by filling the contact holes.

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Suwon, South Korea

Joo-won Lee