Globalfoundries Inc.

Joo Tat Ong

Hui Zang

Xusheng Kevin Wu

Yi Qi

Yanping Shen

Hsien-Ching Lo

Wei Hong

Yongjun Shi

Alina Vinslava

Dongil Choi

Yoong Hooi Yong

James Psillas

A semiconductor structure including a source/drain region is disclosed. The source/drain region may include a first epitaxial region along at least one sidewall of the source/drain region having a substantially uniform sidewall thickness. The semiconductor structure may further include a gate structure adjacent and above the source/drain region wherein at least a portion of the first epitaxial region is positioned below a sidewall spacer of the gate structure. A method of forming a source/drain region including a first epitaxial region having a substantially uniform sidewall thickness is disclosed. The method may include forming a trench in a substrate adjacent to a gate structure, forming the first epitaxial region in the trench, forming a spacer material layer on the gate structure and on a portion of the first epitaxial region, and removing a portion of the first epitaxial region using the spacer material layer as a mask.

Epitaxial region for embedded source/drain region having uniform thickness

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Ballston Lake, NY, United States of America

Joo Tat Ong