Samsung Electronics Co., Ltd.

Joo-tae Moon

Sang-jun Choi

Yool Kang

Sang-gyun Woo

Jeong-hee Chung

Hyun-Woo Kim

Chang-jin Kang

Si-hyeung Lee

Byeong-yun Nam

Byong-sun Ju

Hyoun-woo Kim

A photosensitive copolymer has a weight-average molecular weight of 3,000 to 100,000 and is represented by the following formula:wherein Ris a hydrogen atom or methyl, Ris an acid-labile tertiary alkyl group, and m/(m+n) is 0.5 to 0.8.

Photosensitive polymer having cyclic backbone and resist composition containing the same

A method for forming a fine pattern in a semiconductor substrate, by coating a target layer to be etched on a semiconductor substrate with a resist composition including at least one compound capable of forming a photoresist pattern by a photolithography process, and a free radical initiator. The free radical initiator is capable of being decomposed by a thermal process at a temperature equal to or higher than the glass transition temperature of the at least one compound. A lithography process is performed on the resist compound layer to form a photoresist pattern. The resist compound layer having the photoresist pattern formed therein is heated to a temperature equal to or higher than the glass transition temperature of the at least one compound, and wherein a partial cross-linking reaction in the resist composition occurs.

Methods for forming line patterns in semiconductor substrates

A method for forming a fine pattern in a semiconductor substrate, comprises the steps of (a) coating a target layer to be etched on a semiconductor substrate with a resist composition comprising at least one compound capable of forming a photoresist pattern by a photolithography process, and a free radical initiator, wherein the free radical initiator is one which is capable of being decomposed by a thermal process at a temperature equal to or higher than the glass transition temperature of the at least one compound, wherein said coating step results in forming a resist compound layer comprising the resist composition; (b) performing a lithography process on the resist compound layer to form a photoresist pattern of at least one opening having a first width, wherein the target layer is exposed through the first width; and (c) heating the resist compound layer having the photoresist pattern formed therein to a temperature equal to or higher than the glass transition temperature of the at least one compound, and wherein a partial cross-linking reaction in the resist composition occurs by the free radicals produced from the free radical initiator resulting in a modified photoresist pattern having at least one opening having a second width which exposes the target layer, wherein the second width is smaller than the first width.

A method for manufacturing a photoresist pattern that defines an opening having a small size, and a method for manufacturing a semiconductor device using the same are provided. A photoresist pattern defining the opening can be formed using a photoresist composition that includes either polymer mixture I containing a polymer A in which an acid-labile di-alkyl malonate group is pendant to the polymer backbone, and a polymer B in which a group that thermally decomposes at a temperature lower than the glass transition temperature of the polymer B itself is pendant to the polymer backbone, or polymer mixture II containing the polymer B and a polymer C including a (meth)acrylate as a monomer, as a main component. The size of the opening then can be reduced by thermal flowing the photoresist pattern. It is possible to form the photoresist pattern defining an opening having a small size since the photoresist composition comprises the polymer mixture which has advantageous characteristics, such as high contrast, and in which the flow rate of the composition upon thermal flowing can easily be controlled.

Method for manufacturing a photoresist pattern defining a small opening and method for manufacturing semiconductor device using the same

There is provided a polymer for use in a chemically amplified resist and represented by the following formula:

Polymer and chemically amplified resist composition including silicon containing protecting group

A method of etching a platinum group metal film uses a gas mixture containing argon (Ar), oxygen (O,) and halogen gases and a method of forming a lower electrode of a capacitor uses the etching method. The gas mixture contains O,, Ar, and a third component, preferably a halogen, e.g., chlorine (Cl,) or hydrogen bromide (HBr). In the method of forming a lower electrode, a conductive film containing a metal belonging to a platinum (Pt) group is formed on a semiconductor substrate, a hard mask partially exposing the conductive film is then formed on the conductive film. Then, the exposed conductive film is dry-etched using the hard mask as an etching mask and a three-component gas mixture containing argon (Ar) and oxygen (O,), to form a conductive film pattern beneath the hard mask, and the hard mask is then removed.

Methods of etching platinum group metal film and forming lower electrode of capacitor

A polymer for use in a chemically amplified photoresist and represented by the following formula: ##STR1## where R' is one selected from the group including: ##STR2## in which R.sub.1 is one selected from the group including --H and --CH.sub.3, m and n are integers, and m/(m+n)=0.1-0.6, and ##STR3##

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Kyungki-do, South Korea

Joo-tae Moon