Samsung Electronics Co., Ltd.

Sungkyunkwan University

Joo Seong Kim

Kwang Ho Kim

Sang Ho Kim

Jong Woo Kim

Jung Hyun Park

Bai Sun Kong

Joo Sung Lee

Jun Hyeok Yang

A temperature sensing device including a first temperature sensor having a first resistor and a first capacitor and generating a first voltage applied to at least one of the first resistor or the first capacitor based on a first clock signal and a second clock signal generated by delaying the first clock signal, a second temperature sensor having a second resistor and a second capacitor and generating a second voltage applied to at least one of the second resistor or the second capacitor based on the first and second clock signals, a controller generating code data based on the first voltage and the second voltage and generating a control signal based on the code data, and a delay locked loop circuit delaying the first clock signal based on the control signal to generate the second clock signal may be provided.

Temperature sensing device and system on chip

Provided are a semiconductor circuit and a semiconductor system. A semiconductor circuit includes a bandgap reference voltage generation circuit including an operational amplifier to amplify a differential voltage between a first node and a second node; a first startup circuit which receives input of an output signal of the operational amplifier from an output voltage node of the bandgap reference voltage generation circuit and pulls up the second node; and a second startup circuit which pulls down the output voltage node.

Semiconductor circuit and semiconductor system

A CMOS temperature sensor is provided. The CMOS temperature sensor, comprises: a bandgap reference circuit outputting a constant bandgap reference voltage regardless of temperature using a first voltage inversely proportional to temperature and a second voltage proportional to temperature and generating a first current proportional to temperature using the second voltage; a reference voltage generator copying the first current and outputting a reference voltage generated using the first voltage and the copied first current; and a temperature information voltage generator copying the first current and outputting a temperature information voltage proportional to temperature.

High-accuracy CMOS temperature sensor and operating method

The present invention discloses a CMOS differential logic circuit. The CMOS differential logic circuit includes a precharge differential logic unit, which is precharged to a source voltage in response to a clock signal and is configured to output voltage having an increased load-driving ability using a boosting voltage; a voltage-boosting unit, which is pulled down by a ground voltage in response to the clock signal and is configured to boost the pulled-down voltage using capacitive coupling and output the boosting voltage; and a switching unit, which is configured to couple the precharge differential logic unit and the voltage-boosting unit in response to the clock signal. The propagation delay of a signal from the input terminal to the output terminal of a circuit in a low-source-voltage environment can be reduced, and the operating speed of the circuit and energy efficiency of the operation thereof can be improved.

Growing community of inventors

Seoul, South Korea

Joo Seong Kim