Hynix Semiconductor Inc.

Joo Kyoung Song

Hyoung Soon Yune

Hak Yong Sim

A method for manufacturing a semiconductor device comprises performing an exposing and developing process using an exposure mask including shading patterns and assistant patterns arranged in parallel to the shading patterns to prevent a scum phenomenon generated when a main pattern is formed in a cell region over a semiconductor substrate, thereby improving characteristics, reliability and yield of the semiconductor device. As a result, the method enables high-integration of the semiconductor device.

Exposure mask and method for manufacturing semiconductor device using the same

A method for processing optical proximity correction is disclosed which eliminates a need for repeated implementation of experiments and result in a reducing the processing time as compared to trial and error. Furthermore, the method can realize an optimal insertion of the assist pattern by applying different conditions to specific layers. The method includes determining whether or not to insert an assist pattern around an outermost pattern. A shape of the assist pattern inserted around the outermost pattern is determined. The contrast of the outermost pattern is compared against a contrast of a cell array pattern. The contrast of the outermost pattern is repeated compared with the contrast of the cell array pattern under a defocus state.

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Icheon-si, South Korea

Joo Kyoung Song