Samsung Electronics Co., Ltd.

Joo-Hyung Yang

Young-Ho Kim

Jaeho Kim

Tae-Sung Kim

Jae-hyun Kim

Jungsik Choi

Sun-Yul Ahn

Kyoungmi Kim

Kyong-Rim Kang

Methods of forming patterns are provided. The methods may include sequentially forming an etch-target layer and a photoresist layer on a substrate, exposing two first portions of the photoresist layer to light to transform the two first portions into two first photoresist patterns and exposing a second portion of the photoresist layer to light to transform the second portion into a second photoresist pattern disposed between the two first photoresist patterns. The method may also removing portions of the photoresist layer to leave the two first photoresist patterns and the second photo resist pattern on the etch-target layer such that the etch-target layer is exposed.

Methods of forming patterns

A polymer resin composition, a method for forming a pattern using the polymer resin composition, and a method for fabricating a capacitor using the polymer resin composition are disclosed. The polymer resin composition includes about 75 to 93 percent by weight of a copolymer prepared from benzyl methacrylate, methacrylic acid, and hydroxyethyl methacrylate; about 1 to 7 percent by weight of a cross-linking agent; about 0.01 to 0.5 percent by weight of a thermal acid generator; about 0.01 to 1 percent by weight of a photoacid generator; about 0.00001 to 0.001 percent by weight of an organic base; and a solvent.

Polymer resin composition, related method for forming a pattern, and related method for fabricating a capacitor

Growing community of inventors

Suwon-si, South Korea

Joo-Hyung Yang