Samsung Electronics Co., Ltd.

Korea Advanced Institute of Science and Technology

Joo-hyung Lee

Jun-Bo Yoon

Hong-seok Lee

Byung-Hoo Jung

Chang-Won Hwang

Yong-suk Jin

Hoon Song

Mun-Pyo Hong

Dong-gyu Kim

Jin-Hong Kim

Jae-Jong Han

Ju-Bum Lee

Hwan-Young Choi

Jae-Ho Huh

Jae-hyung Lee

Chan-Joo Youn

Won-Seok Choi

Suk-Bum Mah

Jeong-Ho Yeon

Provided are a light guide member, a lighting apparatus including the light guide member, and a method of fabricating the light guide member. The light guide member comprises: a body, which is formed as a transparent plate, including a first surface and a second surface facing the first surface; and a plurality of dimple type optical controllers formed beneath at least one of the first surface and the second surface and having reflective surfaces that reflect light proceeding between the first and second surfaces of the body toward at least one of the first and second surfaces.

Light guide member, lighting apparatus using the light guide member, and method of fabricating the light guide member

Disclosed are a light guide plate and a backlight unit. The backlight unit according to the present invention includes: a light guide plate; a light source disposed on one side of the light guide plate; and a reflective plate disposed under the light guide plate, wherein, in the cross section of one side of the light guide plate, the light guide plate includes a plurality of unit slits including a first slit and a second slit, wherein the first slit and the second slit are inclined from a top surface toward the inside of the light guide plate with respect to a vertical direction of the top surface, and wherein the first slit and the second slit are symmetrical to each other with respect to the middle portion of the unit slit.

Light guide plate and backlight unit

There is provided a see-through display device. A see-through display device comprises a liquid crystal plate filled with liquid crystals; first and second orientation plates respectively positioned on upper and lower surfaces of the liquid crystal plate, and controlling an initial alignment state of the liquid crystals; first and second conductive plates respectively positioned on an upper surface of the first orientation plate and a lower surface of the second orientation plate, and being filled with a conductive material; first and second transparent plates respectively positioned on an upper surface of the first conductive plate and a lower surface of the second conductive plate; first and second polarizing plates respectively positioned on an upper surface of the first transparent plate and a lower surface of the second transparent plate; and a transparent light guide plate spaced apart from a lower surface of the second polarizing plate, and allowing beams incident from a light source positioned at one side thereof to be totally reflected and emitted upward. Accordingly, a see-through display device comprises a transparent optical display device and a transparent light guide plate having a light source disposed at one side thereof, so that the display device can be optically transparent even when it is not operated.

Transparent see-through display device

Provided is a method of manufacturing an all-in-one type light guide plate. The method includes: fabricating a master including a plurality of inverse-prism shape structures; forming an elastic mold by applying an elastomer on the master; and fabricating the all-in-one type light guide plate, on which a plurality of inverse-prism shape structures are integrally formed, by applying a light transmissive material on the elastic mold.

Method of manufacturing all-in-one type light guide plate

The front light unit includes a light source and a light guide plate that guides light emitted from the light source. The light guide plate includes a rear surface through which the guided light is emitted and a front surface facing the rear surface, and a plurality of prism shape structures which are provided in one unit with the light guide plate and emits light totally reflected from the front surface of the light guide plate. The light guide plate and the prism shape structures are formed of a transparent elastic material.

Front light unit with prisms structure and display apparatus having the same

TFT-LCD devices include a plurality of pixels and each pixel includes a thin-film transistor (TFT) and an opaque LDD electrode which is capacitively coupled to a portion of the TFT's active layer, so that an impurity doped LDD region is not necessary and improved device characteristics can be achieved. The TFT includes a gate electrode, a channel region, a drain extension region at a first end of the channel region and a drain region of first conductivity type electrically coupled to the first end of the channel region by the drain extension region. In addition, an LDD electrode is disposed opposite the drain extension region so that during on-state operation of the TFT, a relatively high first conductivity type charge carrier concentration can be established in the drain extension region, upon application of a potential bias thereto. A transparent substrate is also provided and the LDD electrode is disposed between the transparent substrate and the drain extension region. The drain region of the TFT is also self-aligned to the LDD electrode, but is preferably not self-aligned to the gate electrode. A transparent pixel electrode is also electrically coupled to the drain region and a data line is electrically coupled to the source region. According to another embodiment of the present invention, a gate electrode insulating layer is disposed between the gate electrode and the active layer and a common electrode is disposed between the gate electrode insulating layer and the pixel electrode. The common electrode is preferably electrically connected to the LDD electrode and may even be contiguous as a single layer of material.

Thin-film transistor (TFT) liquid crystal display (LCD) devices having field-induced LDD regions

A thin film transistor including a gate, a source, and a drain is formed on a substrate. An insulating film containing H,O is formed on the thin film transistor. For example, spin-on glass (SOG) containing H,O may be used. H,O contained in the insulating film is diffused through the thin film transistor by performing thermal processing on the insulating film. Trapping centers in the polysilicon may therefore be reduced.

Methods of manufacturing thin film transistors using insulators containing water

The amorphous silicon layer overlaps the gate electrode and the edges of the amorphous silicon layer are substantially encompassed by the edges of the gate electrode. The distance between the edges is at least 2 microns. Accordingly, both the light obliquely incident on the amorphous silicon layer from the outside once the light normally incident on the amorphous silicon layer is blocked by the gate electrode. Insulation layers, which are separated from the amorphous silicon layer and made of an amorphous silicon, are interposed between the edges of the source/drain electrodes and the gate electrode to reinforce the insulation between the gate electrode and the source/drain electrodes and also to absorb the light reflected by the source/drain electrodes and the gate electrode. The source electrode may partially surround the drain electrode in annular shape, to reduce the parasitic capacitance generated between the gate electrode and the drain electrode. The amorphous silicon layer may protrude out the gate electrode near the edges of the gate electrode which encompasses a source electrode and the source/drain electrodes. The amorphous silicon layer covers the edges of the gate electrode which encompasses the source electrode. The source electrode may be curved to prolong the distance between the drain electrode and the portion of the amorphous silicon layer.

Thin film transistors for liquid crystal displays

Thin film transistor-liquid crystal display and a manufacturing method thereof

A double level gate layer with an undercut lower gate layer can be formed by using the etching rate difference between the upper gate layer and the lower gate layer in a polycrystalline Si type TFT LCD that has P-channel TFTs and N-channel TFTs. An LDD structure can be easily formed by using an upper gate layer as ion implant mask during the N-type ion implantation. LDD size is decided by the skew size between the upper gate layer and the lower gate layer. Furthermore, a photolithography step necessary for masking the ion implantation can be skipped.

Method for forming a TFT in a liquid crystal display

A method for manufacturing a polysilicon thin film transistor (TFT) according to the present invention reduces the electric field near the drain junction by varying partially the thickness of a gate insulating layer through a post oxide process. A polysilicon layer is patterned to become an active layer and a chemical vapor deposition oxide film deposited. By thermal oxidation a thermal oxide film is formed under the chemical vapor deposition oxide film. A gate electrode made of polysilicon is formed on the gate insulating layer. Thermal oxidation is performed to make the end portions of the thermal oxide film thicker than the portion under the gate electrode of the thermal oxide film. With this process, the electric field near the drain junction region is reduced and thus the leakage currents of the TFT decrease. In addition, the method in this invention is very simple compared with the conventional methods of obtaining a LDD structure and on-current is not reduced.

Method for manufacturing a polysilicon TFT with a variable thickness

Methods of forming polycrystalline semiconductor layers include the steps of forming a first polycrystalline semiconductor layer on a first amorphous semiconductor layer. The first polycrystalline semiconductor layer is then converted to a second amorphous semiconductor layer. At least a portion of the second amorphous semiconductor layer is then converted to a second polycrystalline semiconductor layer. In particular, relatively large size crystal grains may be produced in a semiconductor layer by converting the second amorphous semiconductor layer and at least a portion of the first amorphous semiconductor layer to a second polycrystalline semiconductor layer.

Methods of forming polycrystalline semiconductor layers

A liquid crystal display having a circuit to protect against static electricity makes passages in which static electricity can flow, by connecting diodes between a plurality of data lines, gate lines and a plurality of shorting lines in the same or opposite direction as current flow. Accordingly, the circuit protects a liquid crystal display from static electricity. A testing method of display quality checks whether the data lines and the gate lines are shorted or not by applying signals to the gate lines and the data lines through shorting lines and making mutually inverted output voltages appear in contiguous pixels.

Liquid crystal display having an electrostatic discharge protection

Methods of forming thin-film transistor liquid crystal display devices include the steps of forming a semiconductor active layer on a face of a transparent substrate and then forming a gate electrode insulating layer on the semiconductor active layer. The gate electrode insulating layer is then patterned to expose a first portion of the semiconductor active layer. A gate electrode is also formed on the gate electrode insulating layer, opposite the semiconductor active layer. In addition, a pixel electrode is formed to be electrically coupled to the exposed first portion of the semiconductor active layer. Preferably, the steps of forming the gate electrode and pixel electrode are performed simultaneously by forming a transparent conductive layer on the patterned gate electrode insulating layer and then patterning the transparent conductive layer to define a transparent gate electrode and a transparent pixel electrode. The transparent conductive layer may comprise a material selected from the group consisting of indium tin oxide (ITO) and zinc oxide (ZnO). Dopants of first conductivity type are also preferably implanted into the semiconductor active layer, using the gate electrode and the pixel electrode as an implant mask, and then a laser annealing step is performed to recrystallize the channel portion of the active layer and activate the dopants in the source and drain regions.

Method of forming thin-film transistor liquid crystal display having a

The present invention relates to a thin film transistor-liquid crystal display (hereinafter referred to as a TFT-LCD) and a manufacturing method thereof. An amorphous silicon is deposited on a substrate. The amorphous silicon is transformed into a poly silicon by method of solid phase crystallization, and the first poly silicon layer pattern is formed by etching. An amorphous silicon is deposited on the first poly silicon layer pattern. The amorphous silicon is transformed into a second poly silicon layer by method of solid phase crystallization.

Growing community of inventors

Daejeon, South Korea

Joo-hyung Lee